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AIROC Bluetooth Low Energy 5.4 MCU

Datasheet

General description

The Infineon AIROC™ CYW20829 is a high-performance, ultra-low-power and “Secure” MCU + Bluetooth® LE platform, purpose-built for IoT applications. It combines a high-performance microcontroller with Bluetooth® LE (5.4) connectivity, high-performance analog-to-digital conversion audio input, I2S/PCM, CAN, LIN for automotive use cases and other standard communication and timing peripherals. CYW20829 employs high level of integration to minimize external components, reducing the device footprint and costs associated with implementing Bluetooth® Low Energy solutions. AIROC™ CYW20829 is the optimal solution for wireless input devices, remotes, keyboards, joysticks, Bluetooth® Mesh, automotive, asset tracking, and Bluetooth® LE IoT applications that need 10 dBm RF output power such as lighting and home automation.

Features

  • 32-bit application core subsystem
    • 48/96-MHz Arm® Cortex®-M33 CPU with single-cycle multiply and memory protection unit (MPU)
    • Armv8-M architecture
    • CMOS 40-nm process
    • User-selectable core logic operation at either 1.1 V or 1.0 V
    • Active CPU current slope with 1.1 V core operation
      • Cortex®-M33: 40 μA/MHz
    • Active CPU current slope with 1.0 V core operation
      • Cortex®-M33: 22 μA/MHz
    • Datawire (DMA) controller with 16 channels
    • 32-KB cache for greater XIP performance with lower power
  • Memory subsystem
    • 256-KB SRAM with power and data retention control
    • OTP eFuse array for security provisioning
  • Bluetooth® Low Energy subsystem
    • 48-MHz Arm® Cortex®-M33 CPU with 2.4 GHz RF transceiver with 50 Ω antenna drive
    • Digital PHY
    • Link layer engine supporting master and slave modes
    • Programmable TX power: up to 10 dBm
    • RX sensitivity:
      • LE-1 Mbps: -98 dBm
      • LE-2 Mbps: -95 dBm
      • Coded PHY 500 kbps (LE-LR): –101 dBm
      • Coded PHY 125 kbps (LE-LR): –106 dBm
    • 5.2 mA TX (0 dBm), 17.2 mA TX (10 dBm), and 5.6 mA RX (LE 1 Mbps) current with 3.0 V supply and using internal buck converter
    • CYW20829 link layer engine can support up to 16 connections of any combinations between central and peripheral devices simultaneously. For example, 13 central devices and three peripheral devices, or three central devices and 13 peripheral devices
    • Angle of Arrival (AoA) and Angle of Departure (AoD)1
  • Low-power 1.7 V to 3.6 V operation
    • Six power modes for fine-grained power management
    • Deep Sleep mode current of 4.5 µA with 64 KB SRAM retention
    • On-chip DC-DC buck converter
  • Flexible clocking options
    • 8-MHz internal main oscillator (IMO) with ±2% accuracy
    • Ultra-low-power 32 kHz internal low-speed oscillator (ILO)
    • Two oscillators: High-frequency (24 MHz) for radio PLL and low-frequency (32 kHz watch crystal) for LPO
    • 48-MHz low power IHO (internal oscillator)
    • Frequency-locked loop (FLL) for multiplying IMO frequency
    • Integer and fractional peripheral clock dividers
  • Quad SPI (QSPI)/serial memory interface (SMIF)
    • eXecute-In-Place (XIP) from external quad SPI flash
    • On-the-fly encryption and decryption
    • Support for DDR
    • Supports single, dual, and quad interfaces with throughput up to 384 Mbps
  • Serial communication
    • Three run-time configurable Serial Communication Blocks (SCBs)
      • First SCB: Configurable as SPI or I2C
      • Second SCB: Configurable as SPI or UART
      • Third SCB: Configurable as I2C or UART
      • Only 2 instances of specific buses (SPI/I2C/UART) are possible among 3 SCBs
  • Audio subsystem
    • Two pulse density modulation (PDM) channels and one I2S channel with time division multiplexed (TDM) mode
  • Timing and pulse-width modulation
    • Seven 16-bit and two 32-bit Timer/Counter Pulse-Width Modulator (TCPWM) blocks, for MCU. Multiple PWMs needed for color LEDs
    • PWM supports center-aligned, edge, and pseudo-random modes
  • ADC and MIC
    • 12b sigma-delta switched cap ADC for audio and DC measurements
  • Up to 32 programmable GPIOs
    • One I/O port (8 I/Os) enables Boolean operations on GPIO pins; available during system Deep Sleep
    • Programmable drive modes, strengths, and slew rates
    • Two overvoltage-tolerant (OVT) pins
    • Up to six, used for SMIF
  • Security built into platform architecture
    • ROM-based root of trust via uninterruptible “Secure Boot”
    • Step-wise authentication of execution images
    • Secure execution of code in execute-only mode for protected routines
    • All debug and test ingress paths can be disabled
    • Up to four protection contexts (One available for customer code)
    • Secure debug support via authenticated debug token
    • Encrypted image support for external SMIF memory
  • Cryptography hardware
    • Hardware Acceleration for symmetric cryptographic methods and hash functions
    • True Random Number Generation (TRNG) function
  • Packages
    • 56-lead 6 mm x 6 mm

Eclipse IDE for Modustoolbox™ software

Modustoolbox™ software is Infineon’s comprehensive collection of multi-platform tools and software libraries that enable an immersive development experience for creating converged MCU and wireless systems. It is:

  • Comprehensive - it has the resources you need
  • Flexible - you can use the resources in your own workflow
  • Atomic - you can get just the resources you want

Infineon provides a large collection of code repositories on GitHub. This includes:

  • Board support packages (BSPs) aligned with Infineon kits
  • Low-level resources, including a hardware abstraction layer (HAL) and peripheral driver library (PDL)
  • Middleware enabling industry-leading features such as Bluetooth® Low Energy, and mesh networks
  • An extensive set of thoroughly tested code example applications
Note: The HAL provides a high-level, simplified interface to configure and use the hardware blocks on Infineon MCUs and SoCs. It is a generic interface that can be used across multiple product families. You can leverage the HAL’s simpler and more generic interface for most of an application, even if one portion requires fine-grained control.

ModusToolbox™ software is IDE-neutral and easily adaptable to your workflow and preferred development environment. It includes a Project Creator, a Library Manager, a BSP Assistant, peripheral and library configurators, as well as the optional Eclipse IDE for the ModusToolbox™, as Figure 1 shows. For information on using Infineon tools, refer to the documentation delivered with ModusToolbox™ software.

Figure 1. ModusToolbox™ software tools


Block diagram

Figure 2 shows the major subsystems and a simplified view of their interconnections. The color coding shows the lowest power mode where a block is still functional. For example, the SRAM is functional down to DS-RAM mode. It should also be noted that six SMIF IOs are in addition to the 26 GPIOs listed in Figure 2.

Figure 2. Functional block diagram


AIROC™ CYW20829 devices include extensive support for programming, testing, debugging, and tracing both hardware and firmware. All device interfaces can be permanently disabled (device security) for applications concerned about attacks due to a maliciously reprogrammed device. All programming, debug, and test interfaces are disabled when maximum device security is enabled. The security level is settable by the user.

Complete debug-on-chip functionality enables full device debugging in the final system using the standard production device. It does not require special interfaces, debugging pods, simulators, or emulators. Only the standard programming connections are required to fully support debug.

The Eclipse IDE for ModusToolbox™ and Integrated Development Environment (IDE) provide fully integrated programming and debug support for these devices. The SWJ (SWD and JTAG) interface is fully compatible with industry-standard third party probes. With the ability to disable debug features, with very robust flash protection, and by allowing customer-proprietary functionality to be implemented in on-chip programmable blocks, CYW20829 provides a very high level of security.

Functional description

The following sections provide an overview of the features, capabilities and operation of each functional block identified in the block diagram in Figure 2. For more detailed information, refer to the following documentation:

  • Board support package (BSP) documentation

BSPs are available on GitHub. They are aligned with Infineon kits and provide files for basic device functionality such as hardware configuration files, startup code, and linker files. The BSP also includes other libraries that are required to support a kit. Each BSP has its own documentation, but typically includes an API reference such as the example here. This search link finds all currently available BSPs on the Infineon GitHub site.

  • Hardware abstraction layer(HAL) API reference manual

The Infineon HAL provides a high-level interface to configure and use hardware blocks on Infineon MCUs. It is a generic interface that can be used across multiple product families. You can leverage the HAL’s simpler and more generic interface for most of an application, even if one portion requires finer-grained control. The HAL API Reference provides complete details. Example applications that use the HAL download it automatically from the GitHub repository.

CPU and memory subsystem

AIROC™ CYW20829 has multiple bus masters, as Figure 2 shows. They are: CPU, datawire, QSPI, and a Crypto block. Generally, all memory and peripherals can be accessed and shared by all bus masters through multi-layer Arm® AMBA high-performance bus (AHB) arbitration. An interprocessor communication block (IPC) provides communication between the CPU and the Bluetooth® LE sub-system.

CPU

The Cortex®-M33 has single-cycle multiply and a memory protection unit (MPU). It can run at up to 96 MHz in LP mode and 48 MHz in ULP mode. This is the main CPU, designed for a short interrupt response time, high code density, and high throughput.

Cortex®-M33 implements a version of the Thumb instruction set based on Thumb-2 technology (defined in the Armv8-M architecture reference manual).

The main MCU also implements device-level security, safety, and protection features. Cortex®-M33 provides a secure, interruptible boot function. This guarantees that post boot, system integrity is checked and memory and peripheral access privileges are enforced.

The CPU has the following power draw, at VDDD = 3.0 V and using the internal buck regulator.

Table 1. Active current slope at VDDD = 3.0 V using the internal buck regulator
System power mode
CPU ULP LP
22 μA/MHz 40 μA/MHz

The CPU can be selectively placed in Sleep and Deep Sleep power modes as defined by Arm®. The CPU also implements a Deep Sleep RAM (DS-RAM) mode in which almost all the circuits except RAM are powered OFF. Data in RAM is retained to maintain state. Upon exit, the CPU goes through a reset but can use the data in RAM to skip software initialization.

The CPU also has nested vectored interrupt controllers (NVIC) for rapid and deterministic interrupt response, and wake up interrupt controllers (WIC) for CPU wake up from Deep Sleep power mode.

CYW20829 has a debug access port (DAP) that acts as the interface for device programming and debug. An external programmer or debugger (the “host”) communicates with the DAP through the device serial wire debug (SWD) or Joint Test Action Group (JTAG) interface pins. Through the DAP (and subject to device security restrictions), the host can access the device memory and peripherals as well as the registers in the CPU.

CPU debug and trace features are as follows:

  • Six hardware breakpoints and four watchpoints, serial wire viewer (SWV), and printf()-style debugging through the single wire output (SWO) pin

Interrupts

The CPU has interrupt request lines (IRQ), with the interrupt source ‘n’ directly connected to IRQn.

Each interrupt supports eight configurable priority levels. One system interrupt can be mapped to the CPU non-maskable interrupts (NMI). Multiple interrupt sources are capable of waking the device from Deep Sleep power mode using the WIC.

Datawire

Datawire is a light weight DMA controller with 16 channels, which support CPU-independent accesses to memory and peripherals. The descriptors for the channels are in SRAM and the number of descriptors is limited only by the size of the memory. Each descriptor can transfer data in two nested loops with configurable address increments to the source and destination.

Cryptography accelerator (Cryptolite)

A combination of HW and SW is able to support several cryptographic functions. Specifically it supports the following functions:

  • Encryption/decryption
    • AES-128 hardware accelerator with following supported modes:
      • Electronic Code Book (ECB)
      • Cipher Block Chaining (CBC)
      • Cipher Feedback (CFB)
      • Output Feedback (OFB)
      • Counter (CTR)
  • Hashing
    • Secure Hash Algorithm (SHA-256) hardware accelerator
  • Message Authentication Functions (MAC)
    • Hashed Message Authentication Code (HMAC) acceleration using SHA-256 hardware
  • True Random Number Generator (TRNG)
  • Vector unit hardware accelerator
    • Digital Signature Verification using RSA
    • Digital Signature Verification using ECDSA

Protection units

CYW20829 has multiple types of protection to control erroneous or unauthorized access to memory and peripheral registers.

Protection units support memory and peripheral access attributes including address range, read/write, code/data, privilege level, secure/non-secure, and protection context.

Protection units are configured at “Secure Boot” to control access privileges and rights for bus masters and peripherals. Up to eight protection contexts (“Secure Boot” is in protection context 0) allow access privileges for memory and system resources to be set by the “Secure Boot” process per protection context by bus master and code privilege level. Multiple protection contexts are available.

AES-128

AES-128 component to accelerate block cipher functionality. This functionality supports forward encryption of a single 128 bit block with a 128 bit key. SHA-256 component to accelerate hash functionality. This component supports message schedule calculation for a 512-bit message chunk and processing of a 512-bit message chunk.

Vector unit (VU)

VU component to accelerate asymmetric key cryptography (for example, RSA and ECC). This component supports large integer multiplication, addition, and so on. TRNG component based on a set of ring oscillators.

The TRNG includes a HW health monitor.

Controller area network flexible data-rate (CAN FD)

CYW20829 supports the CAN FD controller that supports one CAN FD channel. All CAN FD controllers are compliant with the ISO 11898-1:2015 standard; an ISO 16845:2015 certificate is available. It also implements the time-triggered CAN (TTCAN) protocol specified in ISO 11898-4 (TTCAN protocol levels 1 and 2) completely in hardware. All functions concerning the handling of messages are implemented by the RX and TX handlers. The RX handler manages message acceptance filtering, transfer of received messages from the CAN core to a message RAM, and provides receive-message status. The TX handler is responsible for the transfer of transmit messages from the message RAM to the CAN core, and provides transmit-message status. CAN FD is only available in CYW20829B0010.

Local interconnect network (LIN)

CYW20829 contains a LIN channel. Each channel supports transmission/reception of data following the LIN protocol according to ISO standard 17987. Each LIN channel connects to an external transceiver through a 3-pin interface (including an enable function) and supports master and slave functionality. Each block also supports classic and enhanced checksum, along with break detection during message reception and wake-up signaling. Break detection, sync field, checksum calculations, and error interrupts are handled in hardware. LIN is only available in CYW20829B0010.

Real time clock (RTC)

  • Year/Month/Date, Day-of-week, Hour: Minute: Second fields
  • 12 and 24 hour formats
  • Automatic leap-year correction

Memory

CYW20829 contains the SRAM, ROM, and eFuse memory blocks.

  • SRAM: CYW20829 has 256-KB of SRAM. Power control and retention granularity is 64-KB blocks allowing the user to control the amount of memory retained in Deep Sleep. Memory is not retained in Hibernate mode.
  • ROM: The 64-KB ROM, also referred to as the supervisory ROM (SROM), provides code (ROM Boot) for several system functions. The ROM contains, primarily device initialization and security. ROM code is executed, in protection context 0.
  • eFuse: A one-time programmable (OTP) eFuse array consists of 1024 bits, which are reserved for system use such as Die ID, Device ID, initial trim settings, device life cycle, and security settings. Some of the bits are available for storing security key information and hash values and can be programmed by the user for device security. Each fuse is individually programmed; once programmed (or “blown”), its state cannot be changed. Blowing a fuse transitions it from the default state of ‘0’ to ‘1’. To program an eFuse, VDDIO1 must be at 2.5 V ±5%. Because blowing an eFuse is an irreversible process, programming is recommended only in mass production under controlled factory conditions by Infineon provided provisioning tools.

Boot code

On a device reset, the boot code in ROM is the first code to execute. This code performs the following:

  • Device trim setting (calibration)
  • Setting the device protection units
  • Setting device access restrictions for secure life cycle states
  • Configures the Debug Access Port
  • In secure life cycle supports secure debug via authenticated debug token
  • Configures the SMIF for external flash access
  • In secure life cycle validates first user code in external flash by checking its digital signature. Supports OTF decryption of encrypted images in external flash
  • Copies the application bootstrap from the external flash to SRAM and jumps to the ROM. It cannot be changed and acts as the Root of Trust in a secure system

It should also be noted that the ROM code sets the system clock to 48 MHz IHO source.

Memory map

The 32-bit (4 GB) address space is divided into the regions shown in Table 3. Note that code can be executed from the Code, and Internal RAM or External flash.

Table 2. Address map
Address range Name Use
0x0000 0000 – 0x1FFF FFFF Code Program code region. It includes the exception vector table, which starts at address 0
0x2000 0000 – 0x3FFF FFFF SRAM Data region
0x4000 0000 – 0x5FFF FFFF Peripheral All peripheral registers. Code cannot be executed from this region. Bit-band in this region is not supported
0x6000 0000 – 0x8FFF FFFF External NVM SMIF/Quad SPI (see the QSPI interface serial memory interface (SMIF). Code can be executed from this region
0xA000 0000 – 0xDFFF FFFF External Device Not used
0xE000 0000 – 0xE00F FFFF Private Peripheral Bus Provides access to peripheral registers within the CPU core
0xE010 0000 – 0xFFFF FFFF Device Device-specific system registers

The device memory map is shown in Table 3.

Table 3. Internal memory address map
Address range Memory type Size
0x0000 0000 – 0x0001 0000 ROM 64 KB
0x2000 0000 - 0x 2004 0000 SRAM Up to 256 KB

System resources

Power system

The power system provides assurance that voltage levels are as required for each respective mode and will either delay mode entry (on power-on reset (POR), for example) until voltage levels are as required for proper function or generate resets (brownout detect (BOD)) when the power supply drops below specified levels. The design guarantees safe chip operation between power supply voltage dropping below specified levels (for example, below 1.7 V) and the reset occurring. There are no voltage sequencing requirements. CYW20829 does not support POR/BOD to guarantee EFUSE programming voltage.

The VDDD supply (1.7 V to 3.6 V) powers an on-chip buck regulator which offers a selectable (1.0 V or 1.1 V) core operating voltage (VCCD). The selection lets users choose between two system power modes:

  • System Low Power (LP) operates VCCD at 1.1 V and offers high performance, with no restrictions on device configuration
  • System Ultra Low Power (ULP) operates VCCD at 1.0 V for exceptional low power, but imposes limitations on clock speeds

The Bluetooth® radio requires 1.1 V for operation. Bluetooth® system may override user core voltage selection when the radio is turned on. System voltage will return to the user selected value automatically once Bluetooth® radio activity is completed. Refer to Power supply considerations for more details.

Power modes

CYW20829 can operate in four system and three CPU power modes. These modes are intended to minimize the average power consumption in an application. For more details on power modes and other power-saving configuration options, see the relevant application note.

Power modes supported by CYW20829, in the order of decreasing power consumption, are:

  • System Low-power (LP) - All peripherals and CPU power modes are available at maximum speed
  • System Ultra Low-power (ULP) - All peripherals and CPU power modes are available, but with limited speed
  • CPU Active - CPU is executing code in system LP or ULP mode
  • CPU Sleep - CPU code execution is halted in system LP or ULP mode
  • CPU Deep Sleep - CPU code execution is halted and system Deep Sleep is requested in system LP or ULP mode
  • System Deep Sleep - only low-frequency peripherals are available after both CPUs enter CPU Deep Sleep mode
  • System Hibernate - Device and I/O states are frozen and the device resets on wakeup. Multiple sources available to wake up from this mode, including RTC, P0.5 and P1.4
  • Deep Sleep RAM - only RAM and IO states are retained. All system activity except for select low power peripherals ceases until system exits from this state. The CPU resets upon exit but can skip software initialization since RAM is retained

CPU Active, Sleep, and Deep Sleep are standard Arm®-defined power modes supported by the Arm® CPU instruction set architecture (ISA). System LP, ULP, Deep Sleep, Deep Sleep RAM and Hibernate modes are additional low-power modes supported by the CYW20829.

CYW20829 clock system

CYW20829 clock system consists of a combination of oscillators, external clock, and frequency-locked loop.

Specifically, the following:

  • Internal main oscillator (IMO)
  • Internal low-speed oscillator (ILO)
  • Watch crystal oscillator (WCO)
  • System 24 MHz crystal oscillator
  • External clock input
  • One frequency-locked loop (FLL)
  • Internal high-speed oscillator (IHO)

Clocks may be buffered and brought out to a pin on a smart I/O port.

Table 4 shows the mapping of port and associated clock group mapped to peripherals.

Table 4. Mapping of clock groups to peripherals
PCLK group Root clock (clk_hf) Peripherals Frequency Description
LP (1.1 V Typ) ULP (1.0 V Typ)
0 clk_hf0 CPU Trace 24 MHz 24 MHz -
1 clk_hf1 SCB 96 MHz 48 MHz Async peripherals: Strobe signals are driven through dividers; Interface clock is generated inside the peripheral with the main group clock
TCPWM
LIN
CANFD
SMARTIO
2 clk_hf0 SMIF 96 MHz 48 MHz Direct connection pass through from clk_hf. This clock is not used for interface clock, rather it is used for the MMIO clocks of SMIF, BTSS and CRYPTO. BTSS uses this clock for Master and Slave AHB/MMIO transactions, and SMIF also uses this clock for FAST/SLOW clocks
BTSS
CRYPTO
3 clk_hf1 PDM 96 MHz 48 MHz Uses PERI ACLK with default div by 2 option, required interface frequencies are obtained by further division inside the peripheral
TDM
4 clk_hf2 BTSS 48 MHz 48 MHz RPU clock for BTSS
5 clk_hf3 ADCMIC 24 MHz 24 MHz Direct connection for ADCMIC, main source of clk_hf3 is clk_althf which is the BTSS ECO clock
6 clk_hf1 SMIF 96 MHz 48 MHz Direct connection for SMIF and SMARTIO peripherals. This clock is an interface clocks for these peripherals

Internal main oscillator (IMO)

The IMO is the primary source of internal clocking. It is trimmed during testing to achieve the specified accuracy.

The IMO default frequency is 8 MHz and tolerance is ±2%.

Internal low-speed oscillator (ILO)

The ILO is a very low power oscillator, nominally 32 kHz, which operates in all power modes.

Precision internal low-speed oscillator (PILO)

The PILO is a precision low-power oscillator running at 32 kHz. It is factory calibrated to meet Bluetooth® Low Energy requirements. Like the ILO, it can operate in all power modes.

Figure 3. CYW20829 clocking diagram with corresponding oscillators


Note: Using PILO as the ILO clock source will result in longer boot time.

Main crystal oscillator

CYW20829 uses a 24 MHz crystal oscillator (XTAL).

The XTAL must have an accuracy as defined by the Bluetooth® specification. Two external load capacitors are required to work with the crystal oscillator. The selection of the load capacitors is XTAL-dependent (see Figure 4).

Figure 4. Recommended oscillator configuration


Table 5. Reference crystal electrical specifications
Parameter Symbol Electrical specification Note
Min Typ Max Unit
Nominal frequency FL 24.00 MHz
Oscillation mode Fundamental
Load capacitance CL 8 pF
Frequency tolerance ±10 ppm at 25°C ± 3°C
Frequency stability ± 20 ppm Over operating temperature range (reference 25°C)
Operating temperature –40 105 °C
Aging ±3 ppm 1st year at 25°C ± 3°C
Drive level DL 100 200 uW
Series resonant resistance Rr 60
Shunt capacitance C0 3 pF
Insulation resistance 500 MΩ at DC 100 V
Storage temperature range –40 125 °C

32 kHz crystal oscillator

CYW20829 includes a 32 kHz oscillator to provide accurate timing during low power operations. Figure 5 shows the 32 kHz XTAL oscillator with external components and Table 6 lists the oscillator’s characteristics. This oscillator can be operated with a 32 kHz or 32.768 kHz crystal oscillator or be driven with a clock input at similar frequency. The XTAL must have an accuracy of ±250 ppm or better per the Bluetooth® spec over temperature and including aging. The default component values are: C1 = C2 = ~6 pF. The values of C1 and C2 are used to fine-tune the oscillator.

Note: The 32.768-kHz crystal is optional and may be omitted. CYW20829 has an internal PILO (precision internal low-speed oscillator).
Figure 5. 32 kHz oscillator block diagram


Table 6. XTAL oscillator characteristics
Parameter Sym Conditions Min Typ Max Unit
Output frequency Foscout 32.768 kHz
Frequency tolerance Over temperature and aging 250 ppm
XATL driver level Pdrv For crystal selection 0.1 0.5 µW
XTAL series resistance Rseries For crystal selection 70 KΩ
XATL shunt capacitance Cshunt For crystal selection 2.2 pF

Watchdog timers (WDT, MCWDT)

CYW20829 has one WDT and two multi-counter WDTs (MCWDTs). The WDT has a 16-bit free-running counter. Each MCWDT has two 16-bit counters and one 32-bit counter, with multiple operating modes. All of the 16-bit counters can generate a watchdog device reset. All of the counters can generate an interrupt on a match event.

The WDT is clocked by the ILO. It can do interrupt/wakeup generation in system LP/ULP, Deep Sleep, and Hibernate power modes. The MCWDTs are clocked by LFCLK (ILO or WCO). It can do periodic interrupt/wakeup generation in system LP/ULP and Deep Sleep power modes.

Clock dividers

Integer and fractional clock dividers are provided for peripheral use and timing purposes. There are one or more:

  • 8-bit clock dividers
  • 16-bit integer clock dividers
  • 16.5-bit fractional clock dividers
  • 24.5-bit fractional clock divider

Trigger routing

CYW20829 contains a trigger multiplexer block. This is a collection of digital multiplexers and switches that are used for routing trigger signals between peripheral blocks and between GPIOs and peripheral blocks.

There are two types of trigger routing. Trigger multiplexers have reconfigurability in the source and destination. There are also hardwired switches called “one-to-one triggers”, which connect a specific source to a destination. The user can enable or disable the route.

Reset

CYW20829 can be reset from a variety of sources:

  • Power-on reset (POR) to hold the device in reset while the power supply ramps up to the level required for the device to function properly. POR activates automatically at power-up
  • Brown-out detect (BOD) reset to monitor the digital voltage supply VDDD and generate a reset if VDDD falls below the minimum required logic operating voltage
  • External reset dedicated pin (XRES) to reset the device using an external source. The XRES pin is active LOW. It can be connected either to a pull-up resistor to VDDD, or to an active drive circuit, as Figure 6 shows. If a pull-up resistor is used, select its value to minimize current draw when the pin is pulled LOW; 10 kΩ is typical
Figure 6. XRES connection diagram


  • Watchdog Timer (WDT or MCWDT) to reset the device if firmware fails to service it within a specified timeout period
  • Software-initiated reset to reset the device on demand using firmware
  • Logic-protection fault can trigger an interrupt or reset the device if unauthorized operating conditions occur; for example, reaching a debug breakpoint while executing privileged code
  • Hibernate wakeup reset to bring the device out of the system Hibernate low-power mode

Reset events are asynchronous and guarantee reversion to a known state. Some of the reset sources are recorded in a register, which is retained through reset and allows software to determine the cause of the reset.

Bluetooth® LE radio and subsystem

CYW20829 incorporates a Bluetooth® 5.4 LE subsystem (BLESS) that contains the physical layer (PHY) and link layer (LL) engines with an embedded security engine. The Bluetooth® LE SS supports all Bluetooth® LE 5.4 features including LE 2 Mbps, LE Long Range, LE Advertising Extensions, LE Isochronous Channels, Periodic Advertising with Responses (PAwR), Encrypted Advertising Data, LE GATT Security Levels Characteristic and Advertising Coding Selection. Infineon also provides extensive driver library and middleware support for Bluetooth® LE; see Eclipse IDE for Modustoolbox™ software.

The physical layer consists of the digital PHY and the RF transceiver that transmits and receives Gaussian frequency shift keying (GFSK) packets at 1 or 2 Mbps over a 2.4 GHz ISM band, The device also supports Bluetooth® LE long range, both 500 and 125 kbps speeds.

The baseband controller is a composite hardware and firmware implementation that supports both master and slave modes. Key protocol elements, such as HCI and link control, are implemented in firmware. Time-critical functional blocks, such as encryption, CRC, data whitening, and access code correlation, are implemented in hardware (in the LL engine).

The RF transceiver contains an integrated balun, which provides a single-ended RF port pin to drive a 50 Ω antenna via a matching/filtering network. In the receive direction, this block converts the RF signal from the antenna to a digital bit stream after performing GFSK demodulation. In the transmit direction, this block performs GFSK modulation and then converts a digital baseband signal to a radio frequency before transmitting it through the antenna.

Programmable analog-to-digital converter (ADC)

Sigma delta ADC

The ADC block is a single switched-cap Σ-Δ ADC core for audio and DC measurement. It operates at the 12-MHz clock rate and has eight GPIO inputs. The internal bandgap reference has ±5% accuracy without calibration. Different calibration and digital correction schemes can be applied to reduce ADC absolute error and improve measurement accuracy in DC.

One of three internal references may be used for the ADC reference voltage: VDDA, VDDA/2, and an analog reference (AREF). AREF is nominally 1.2 V, trimmed to ±1%.

Programmable digital

  • System Deep Sleep operation
  • Asynchronous or synchronous (clocked) operation
  • Can be synchronous or asynchronous

Fixed-function digital

Timer/counter/pulse-width modulator (TCPWM) block

  • The TCPWM supports the following operational modes:
    • Timer-counter with compare
    • Timer-counter with capture
    • Quadrature decoding
    • Pulse width modulation (PWM)
    • Pseudo-random PWM
    • PWM with dead time
  • Up, down, and up/down counting modes
  • Clock pre-scaling (division by 1, 2, 4,....64, 128)
  • Double buffering of compare/capture and period values• Underflow, overflow, and capture/compare output signals
  • Supports interrupt on:
    • Terminal count - Depends on the mode; typically occurs on overflow or underflow
    • Capture/compare - The count is captured to the capture register or the counter value equals the value in the compare register
  • Complementary output for PWMs
  • Selectable start, reload, stop, count, and capture event signals for each TCPWM; with rising edge, falling edge, both edges, and level trigger options. The TCPWM has a Kill input to force outputs to a predetermined state.

In this device there are:

  • Two 32-bit TCPWMs
  • Seven 16-bit TCPWMs

Serial communication blocks (SCB)

  • This product line has three SCBs:
    • First SCB: Configurable as SPI or I2C
    • Second SCB: Configurable as SPI or UART
    • Third SCB: Configurable as I2C or UART
  • One SCB (SCB #0) can operate in system Deep Sleep mode with an external clock; this SCB can be either SPI slave or I2C slave
  • I2C mode: The SCB can implement a full multi-master and slave interface (it is capable of multimaster arbitration). This block can operate at speeds of up to 1 Mbps (Fast Mode Plus). It also supports EZI2C, which creates a mailbox address range and effectively reduces I2C communication to reading from and writing to an array in the memory. The SCB supports a 256-byte FIFO for receive and transmit. The I2C peripheral is compatible with I2C standard-mode, Fast Mode, and Fast Mode Plus devices. The I2C bus I/O is implemented with GPIO in open-drain modes.
  • UART mode: This is a full-feature UART operating at up to 8 Mbps. It supports automotive single-wire interface (LIN) (only available for CYW20829B0010), infrared interface (IrDA), and SmartCard (ISO 7816) protocols, all of which are minor variants of the basic UART protocol. In addition, it supports the 9-bit multiprocessor mode that allows the addressing of peripherals connected over common Rx and Tx lines. Common UART functions such as parity error, break detect, and frame error are supported. A 256-byte FIFO allows much greater CPU service latencies to be tolerated
  • SPI mode: The SPI mode supports full SPI, Secure Simple Pairing (SSP) (essentially adds a start pulse that is used to synchronize SPI Codecs), and Microwire (half-duplex form of SPI). The SPI block supports an EZSPI mode in which the data interchange is reduced to reading and writing an array in memory. The SPI interface operates with a 24-MHz clock

QSPI interface serial memory interface (SMIF)

A serial memory interface is provided, running at up to 48 MHz. It supports single, dual and quad SPI configurations, and supports up to four external memory devices. It supports two modes of operation:

  • Memory-mapped I/O (MMIO), a command mode interface that provides data access via the SMIF registers and FIFOs
  • Execute-in-Place (XIP), in which AHB reads and writes are directly translated to SPI read and write transfers

In XIP mode, the external memory is mapped into the CYW20829 internal address space, enabling code execution directly from the external memory. To improve performance, a 32 KB cache is included. XIP mode also supports AES-128 based on-the-fly encryption and decryption, enabling secure storage and access of code and data in the external memory.

GPIO

CYW20829 has up to 32 GPIOs, which implement:

  • • Eight drive strength modes:
    • Analog input mode (input and output buffers disabled) on some IOs
    • Input only
    • Weak pull-up with strong pull-down
    • Strong pull-up with weak pull-down
    • Open drain with strong pull-down
    • Open drain with strong pull-up
    • Strong pull-up with strong pull-down
    • Weak pull-up with weak pull-down
    • Hold mode for latching previous state (used for retaining the I/O state in system Hibernate and deep sleep mode)
    • Selectable slew rates for dV/dt-related noise control to improve EMI

The pins are organized in logical entities called ports, which are up to eight pins in width. Data output and pin state registers store, respectively, the values to be driven on the pins and the input states of the pins.

Every pin can generate an interrupt if enabled; each port has an interrupt request (IRQ) associated with it.

The port 4 pins are capable of overvoltage-tolerant (OVT) operation, where the input voltage may be higher than VDDD. OVT pins are commonly used with I²C, to allow powering the chip OFF while maintaining a physical connection to an operating I²C bus without affecting its functionality.

GPIO pins can be ganged to source or sink higher values of current. GPIO pins, including OVT pins, may not be pulled up higher than the absolute maximum; see Electrical specifications.

During power-on and reset, the pins are forced to the analog input drive mode, with input and output buffers disabled, so as not to crowbar any inputs and/or cause excess turn-on current.

A multiplexing network known as the high-speed I/O matrix (HSIOM) is used to multiplex between various peripheral and analog signals that may connect to an I/O pin.

In order to get the best performance, the following frequency and drive mode constraints may be applied. The values (refer to Table 7) represent drive strengths.

Table 7. DRIVE_SEL values
Ports Maximum frequency Drive strength for VDDD < 2.7 V Drive strength for VDDD > 2.7 V
Ports 0, 1 8 MHz Up to 4 mA Up to 8 mA
Ports 2 to 5 16 MHz; 24 MHz for SPI Up to 4 mA Up to 8 mA

Special-function peripherals

Audio subsystem

The audio subsystem is only available in CYW20829B0010, it consists of the following hardware blocks:

  • One inter-IC sound (I2S) interface
  • Two pulse-density modulation (PDM) to pulse-code modulation (PCM) decoder channels

The I2S interface implements two independent hardware FIFO buffers - TX and RX, which can operate in master or slave mode. The following features are supported:

  • Multiple data formats - I2S, left-justified, Time Division Multiplexed (TDM) mode A, and TDM mode B
  • Programmable channel/word lengths - 8/16/18/20/24/32 bits
  • Internal/external clock operation. Up to 192 ksps
  • Interrupt mask events - trigger, not empty, full, overflow, underflow, watchdog
  • Configurable FIFO trigger level with datawire support

The I2S interface is commonly used to connect with audio codecs, simple DACs, and digital microphones. The PDM-to-PCM decoder implements a single hardware Rx FIFO that decodes a stereo or mono 1-bit PDM input stream to PCM data output. The following features are supported:

  • Programmable data output word length - 16/18/20/24 bits
  • Configurable PDM clock generation. Range from 384 kHz to 3.072 MHz
  • Droop correction and configurable decimation rate for sampling; up to 48 ksps
  • Programmable high-pass filter gain
  • Interrupt mask events - not empty, overflow, trigger, underflow
  • Configurable FIFO trigger level with DMA support

The PDM-to-PCM decoder is commonly used to connect to digital PDM microphones. Up to two microphones can be connected to the same PDM data line.

Pinouts

Table 8. Packages and pin information
Pin name Pin number I/O Power domain Description
56-lead
Microphone
MIC_P 54 I VDDA Microphone positive input
MIC_N 55 I VDDA Microphone negative input
MIC_BIAS 53 O VDDA Microphone bias supply
Onboard switching regulator and LDOs
VDDQ 15 I - External supply to PMU analog
VCC_BUCK 17 I - External supply to switching regulator
LX_BUCK 16 O - Switching regulator output
VCCD 18 O - Digital LDO output
VCCI 19 I - RF and digital LDO input
Baseband supply
VDDIO_0 42 I VDDIO_0 Supply for GPIO ports
VDDIO_1 52 I VDDIO_1

Supply for GPIO ports and eFuse programming.

See Table 11 for eFuse programming requirements.

VDDIO_A 7 I VDDIO_A Supply for analog GPIO ports
VDDA 56 I VDDA Analog power supply voltage
RF power supply
VCCRF 20 O - RFLDO output
VDDD 22 I - PALDO and sub-system resources supply
VCCPA_0 21 O - PALDO output
BT_VCOVDD 28 I BT_VCOVDD VCO supply
BT_LNAVDD 26 I BT_LNAVDD LNA supply
BT_IFVDD 27 I BT_IFVDD IFPLL power supply
BT_PLLVDD 29 I BT_PLLVDD RFPLL and crystal oscillator supply
BT_PAVDD 24 I BT_PAVDD Internal PA supply
Radio I/O
BT_RF 25 I/O BT_RF RF antenna port
Crystal
BT_XTALI 30 I BT_PLLVDD Crystal oscillator input. Two external load capacitors are required to work with the crystal oscillator. The selection of the load capacitors is XTAL-dependent.
BT_XTALO 31 O BT_PLLVDD Crystal oscillator output
GPIO
P0.0 32 I/O VDDIO_0 General input and output port. See Table 9 for alternate functions.

P0.5 and P1.4 can be used as the wake source for hibernate mode

P0.1 33 I/O VDDIO_0
P0.2 34 I/O VDDIO_0
P0.3 35 I/O VDDIO_0
P0.4 36 I/O VDDIO_0
P0.5 37 I/O VDDIO_0
P1.0 38 I/O VDDIO_0
P1.1 39 I/O VDDIO_0
P1.2 40 I/O VDDIO_0
P1.3 41 I/O VDDIO_0
P1.4 43 I/O VDDIO_0
P1.5 44 I/O VDDIO_0
P1.6 45 I/O VDDIO_0
P2.0 46 I/O VDDIO_0
P2.1 47 I/O VDDIO_0
P2.2 48 I/O VDDIO_0
P2.3 49 I/O VDDIO_0
P2.4 50 I/O VDDIO_0
P2.5 51 I/O VDDIO_0
P3.0 1 I/O VDDIO_0
P3.1 2 I/O VDDIO_0
P3.2 3 I/O VDDIO_0
P3.3 4 I/O VDDIO_0
P3.4 5 I/O VDDIO_0
P3.5 6 I/O VDDIO_0
P3.6 8 I/O VDDIO_0
P3.7 9 I/O VDDIO_0
P4.0 13 I/O VDDIO_0
P4.1 14 I/O VDDIO_0
P5.0/WCO_OUT 10 I/O VDDIO_0
P5.1/WCO_IN 11 I/O VDDIO_0
P5.2 12 I/O VDDIO_0
XRES 23 I VDDIO_0 Active-low system reset without internal pull-up resistor
Figure 7. Device pinout for 56-lead package


Each port pin has multiple alternate functions. These are defined in Table 9.

Table 9. Multiple alternate functions2
Port/Pin Analog ACT #0 ACT #1 ACT #2 ACT #3 ACT #4 ACT #5 ACT #6 ACT #7 ACT #8 ACT #9 ACT #11 ACT #12 ACT #13 ACT #15 DS #2 DS #3 DS #5 DS #6
P0.0 tcpwm[0].line_compl[0]:3 tcpwm[0].line_compl[262]:0 pdm.pdm_clk[1]:0 tdm.tdm_rx_mck[0]:0 keyscan.ks_col[3] scb[0].spi_select1:0
P0.1 tcpwm[0].line[1]:3 tcpwm[0].line[256]:1 pdm.pdm_data[1]:0 tdm.tdm_rx_sck[0]:0 keyscan.ks_col[4] scb[0].spi_select2:0
P0.2 tcpwm[0].line_compl[1]:3 tcpwm[0].line_compl[256]:1 tdm.tdm_rx_fsync[0]:0 keyscan.ks_col[11] scb[0].i2c_scl:0 scb[0].spi_mosi:0
P0.3 tcpwm[0].line[0]:4 tcpwm[0].line[257]:1 scb[1].spi_select3:0 tdm.tdm_rx_sd[0]:0 keyscan.ks_col[12] scb[0].i2c_sda:0 scb[0].spi_miso:0
P0.4 tcpwm[0].line_compl[0]:4 tcpwm[0].line_compl[257]:1 srss.ext_clk:0 cpuss.trace_data[3]:1 scb[1].spi_select2:0 tdm.tdm_tx_mck[0]:0 keyscan.ks_row[0] scb[0].spi_clk:0
P0.5 tcpwm[0].line[1]:4 tcpwm[0].line[258]:1 btss.antenna_switch_ctrl[0] cpuss.trace_data[2]:1 scb[1].spi_select1:0 tdm.tdm_tx_sck[0]:0 btss.gci_gpio[0] smif.spihb_select1 keyscan.ks_row[1]
P1.0 tcpwm[0].line_compl[1]:4 tcpwm[0].line_compl[258]:1 btss.antenna_switch_ctrl[1] btss.rpu_tdo cpuss.trace_data[1]:1 scb[1].uart_cts:0 scb[1].spi_select0:0 pdm.pdm_clk[1]:1 tdm.tdm_tx_fsync[0]:0 btss.gci_gpio[1] keyscan.ks_row[5] cpuss.swj_swo_tdo
P1.1 tcpwm[0].line[0]:5 tcpwm[0].line[259]:1 btss.antenna_switch_ctrl[2] btss.rpu_tdi cpuss.trace_data[0]:1 scb[1].uart_rts:0 scb[1].spi_clk:0 pdm.pdm_data[1]:1 tdm.tdm_tx_sd[0]:0 btss.gci_gpio[2]:0 keyscan.ks_row[6] cpuss.swj_swdoe_tdi
P1.2 tcpwm[0].line_compl[0]:5 tcpwm[0].line_compl[259]:1 btss.rpu_swd cpuss.trace_clock:1 scb[1].uart_rx:0 scb[2].i2c_scl:1 scb[1].spi_mosi:0 btss.gci_gpio[3] keyscan.ks_col[17]:0 cpuss.swj_swdio_tms
P1.3 tcpwm[0].line[1]:5 tcpwm[0].line[260]:1 btss.rpu_tck srss.ext_clk:1 scb[1].uart_tx:0 scb[2].i2c_sda:1 scb[1].spi_miso:0 btss.gci_gpio[4] keyscan.ks_col[16]:0 cpuss.clk_swj_swclk_tclk
P1.4 tcpwm[0].line_compl[1]:5 tcpwm[0].line_compl[260]:1 lin[0].lin_en[1]:0 btss.gci_gpio[2]:1 keyscan.ks_col[15] keyscan.ks_col[16]:1
P1.5 tcpwm[0].line[0]:6 tcpwm[0].line[261]:1 lin[0].lin_rx[1]:0 keyscan.ks_col[5]
P1.6 tcpwm[0].line_compl[0]:6 tcpwm[0].line_compl[261]:1 lin[0].lin_tx[1]:0 keyscan.ks_col[6] srss.cal_wave
P2.0 smif.spihb_select0
P2.1 smif.spihb_data3
P2.2 smif.spihb_data2
P2.3 smif.spihb_data1
P2.4 smif.spihb_data0
P2.5 smif.spihb_clk
P3.0 adcmic.gpio_adc_in[0] tcpwm[0].line[0]:0 tcpwm[0].line[256]:0 cpuss.trace_data[3]:0 scb[2].uart_cts:0 scb[1].spi_select0:1 keyscan.ks_row[7]
P3.1 adcmic.gpio_adc_in[1] tcpwm[0].line_compl[0]:0 tcpwm[0].line_compl[256]:0 cpuss.trace_data[2]:0 scb[2].uart_rts:0 scb[1].spi_clk:1 lin[0].lin_en[0]:0 keyscan.ks_row[4] cpuss.rst_swj_trstn
P3.2 adcmic.gpio_adc_in[2] tcpwm[0].line[1]:0 tcpwm[0].line[257]:0 cpuss.trace_data[1]:0 scb[2].uart_rx:0 scb[2].i2c_scl:0 scb[1].spi_mosi:1 pdm.pdm_clk[0]:0 lin[0].lin_rx[0]:0 canfd[0].ttcan_rx[0]:0 adcmic.clk_pdm:0 keyscan.ks_col[13]
P3.3 adcmic.gpio_adc_in[3] tcpwm[0].line_compl[1]:0 tcpwm[0].line_compl[257]:0 cpuss.trace_data[0]:0 scb[2].uart_tx:0 scb[2].i2c_sda:0 scb[1].spi_miso:1 pdm.pdm_data[0]:0 lin[0].lin_tx[0]:0 canfd[0].ttcan_tx[0]:0 adcmic.pdm_data:0 keyscan.ks_col[14] keyscan.ks_col[17]:1
P3.4 adcmic.gpio_adc_in[4] tcpwm[0].line[0]:1 tcpwm[0].line[258]:0 cpuss.trace_clock:0 scb[1].spi_select3:1 keyscan.ks_col[7]
P3.5 adcmic.gpio_adc_in[5] tcpwm[0].line_compl[0]:1 tcpwm[0].line_compl[258]:0 scb[1].spi_select2:1 keyscan.ks_col[8]
P3.6 adcmic.gpio_adc_in[6] tcpwm[0].line[1]:1 tcpwm[0].line[259]:0 scb[1].spi_select1:1 keyscan.ks_col[9]
P3.7 adcmic.gpio_adc_in[7] tcpwm[0].line_compl[1]:1 tcpwm[0].line_compl[259]:0 btss.antenna_switch_ctrl[3] keyscan.ks_col[10]
P4.0 tcpwm[0].line_compl[1]:2 tcpwm[0].line_compl[261]:0 scb[2].uart_cts:2 keyscan.ks_row[2] scb[0].i2c_scl:1 scb[0].spi_mosi:1
P4.1 tcpwm[0].line[0]:3 tcpwm[0].line[262]:0 keyscan.ks_row[3] scb[0].i2c_sda:1 scb[0].spi_miso:1
P5.0 tcpwm[0].line[0]:2 tcpwm[0].line[260]:0 scb[2].uart_cts:1 scb[2].i2c_scl:2 scb[1].spi_select0:2 pdm.pdm_clk[0]:1 canfd[0].ttcan_rx[0]:1 adcmic.clk_pdm:1 keyscan.ks_col[0]
P5.1 tcpwm[0].line_compl[0]:2 tcpwm[0].line_compl[260]:0 scb[2].i2c_sda:2 pdm.pdm_data[0]:1 canfd[0].ttcan_tx[0]:1 adcmic.pdm_data:1 keyscan.ks_col[1] scb[0].spi_select0:0
P5.2 tcpwm[0].line[1]:2 tcpwm[0].line[261]:0 keyscan.ks_col[2]

Power supply considerations

Figure 8 shows the typical connections for power pins for all supported packages. In the QFN packages, all internal grounds are routed to the metal pad (EPAD) in the package. This pad must be grounded on the PCB. Figure 8 shows 10 dBm PA configuration. For 0 dBm, connect BT_PAVDD to VCCRF.

Figure 8. CYW20829 power topology


Electrical specifications

All specifications are valid for -40°C < TA < 105°C and for 1.71 V to 3.6 V except where noted.

Absolute maximum ratings

Table 10. Absolute maximum ratings3
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID1 VDD_ABS Analog or digital supply relative to VSS (VSSD = VSSA) –0.5 - 4 V Absolute maximum
SID2 VCCD_ABS Direct digital core voltage input relative to VSSD –0.5 - 1.2 V Absolute maximum
SID3 VGPIO_ABS GPIO voltage; VDDD or VDDA –0.5 - VDD + 0.5 V Absolute maximum
SID4 IGPIO_ABS Current per GPIO –25 - 25 mA Absolute maximum
SID5 IGPIO_injection GPIO injection current per pin –0.5 - 0.5 mA Absolute maximum
SID3A ESD_HBM Electrostatic discharge human body model 2200 - V Absolute maximum
SID4A ESD_CDM Electrostatic discharge charged device model 500 - V Absolute maximum
SID5A LU Pin current for latchup-free operation –100 - 100 mA Absolute maximum
SIDWA8 Vundershoot Maximum undershoot voltage for I/O - - –0.5 V Duration not to exceed 25% of the SIDWA9 V duty cycle
SIDWA9 Vovershoot Maximum overshoot voltage for I/O - - VDDIO + 0.5 V Duration not to exceed 25% of the SIDWA9 V duty cycle
SIDWA10 Tj Maximum junction temperature - - 125 °C

Operating conditions

Table 11. Power supply range, CPU current, and transition time specifications4
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
DC specifications
SID6 VDDD Internal regulator 1.7 - 3.6 V -
SID7 VDDA

Analog power supply voltage. Shorted to VDDIO_A on PCB

1.7 - 3.6 V

Internally unregulated supply

SID7M MIC_BIAS Microphone supply voltage 1.7 - 3.6 V

Internally unregulated supply

SID7R VCCI

RF LDO and Digital LDO input. Connect to output of internal buck

- 1.16 - - -
SID7C
SID7P VDDD PA LDO input 2.7 - 3.6 V

For TX10 mode only, BT_PAVDD connected to VCCPA_0. The minimum supply voltage for VDDD has to be 2.7 V

SID7B VDDIO_0 GPIO supply for ports 1.7 - 3.6 V -
SID7E VDDIO_1

Supply when programming eFuse

2.38 2.5 2.62 V

eFuse programming voltage

SID7A VDDIO_A

GPIO supply for analog ports. Short to VDDA on PCB

1.7 - 3.6 - -
SID8 VCCD (LP)

Output voltage (for core logic bypass)

- 1.1 - V High speed mode
SID9 VCCD (ULP)

Output voltage (for core logic bypass)

- 1.0 - V

ULP mode. Valid for –40 to 105°C

SID10 CEFC

External regulator voltage (VCCD) bypass

3.8 4.7 5.6 µF

X5R ceramic or better. Value for 0.8 to 1.2 V

SID11 CEXC

Power supply decoupling capacitor

- 10 - µF X5R ceramic or better
SID12 VCCRF Output voltage (for radio) - 1.1 - V -
SID13 VCCPA Output voltage (for PA) - 2.5 - V -
SID523 VDDQ External supply to PMU analog 1.7 - 3.6 V -
SID524 VCC_BUCK

External supply to switching

regulator

1.7 - 3.6 V -
SID525 BT_PAVDD Internal PA supply 1 - 2.75 V -
SID526 BT_RF RF power supply 1 - 1.2 V -
SID527 BT_LNAVDD LNA supply 1 - 1.2 V -
SID528 BT_IFVDD IFPLL power supply 1 - 1.2 V -
SID529 BT_VCOVDD VCO supply 1 - 1.2 V -
CPU currents and transition times Cortex® M33 Active mode
Execute with cache enabled
SIDC2 IDD4

Execute from cache; CM33 Active 96 MHz. FLL. Dhrystone

- 4.8 5.8 mA

VDDD = 3.0 V, Buck ON, Max at 60°C

- 7.4 8.4 mA

VDDD = 1.8 V, Buck ON, Max at 60°C

SIDC3 IDD5

Execute from cache; CM33 Active 48 MHz. IHO. Dhrystone

- 2.4 3.4 mA

VDDD = 3.0 V, Buck ON, Max at 60°C

3.7 4.1 mA

VDDD = 1.8 V, Buck ON, Max at 60°C

SIDC4 IDD6

Execute from cache; CM33 Active 8 MHz. IHO. Dhrystone

- 0.9 1.5 mA

VDDD = 3.0 V, Buck ON, Max at 60°C

1.27 1.75 mA

VDDD = 1.8 V, Buck ON, Max at 60°C

SIDS1 IDD11 CM33 Sleep 96 MHz with FLL - 1.5 2.2 mA

VDDD = 3.0 V, Buck ON, Max at 60°C

2.2 2.7 mA

VDDD = 1.8 V, Buck ON, Max at 60°C

SIDS2 IDD12 CM33 Sleep 48 MHz with IHO - 1.2 1.9 mA

VDDD = 3.0 V, Buck ON, Max at 60°C

1.7 2.2 mA

VDDD = 1.8 V, Buck ON, Max at 60°C

SIDS3 IDD13 CM33 Sleep 8 MHz with IHO - 0.7 1.3 mA

VDDD = 3.0 V, Buck ON, Max at 60°C

0.96 1.5 mA

VDDD = 1.8 V, Buck ON, Max at 60°C

Deep Sleep mode
SIDDS1_B IDD33A_B

With internal Buck enabled and 64K SRAM retention

- 5.7 µA

At 25°C (with typical Silicon)

SIDDS2_B IDD33B_B

With internal Buck enabled and 128K SRAM retention

- 6.2 µA

At 25°C (with typical Silicon)

SIDDS5_B IDD33E_B

With internal Buck enabled and 256K SRAM retention

- 7.5 µA

At 25°C (with typical Silicon)

SIDDS3_B IDD33C_B

With internal Buck enabled and 64K SRAM retention DS-RAM

- 4.5 µA

At 25°C (with typical Silicon)

SIDDS4_B IDD33D_B

With internal Buck enabled and 128K SRAM retention DS-RAM

- 5 µA

At 25°C (with typical Silicon)

SIDDS6_B IDD33F_B

With internal Buck enabled and 256K SRAM retention DS-RAM

- 6 - µA

At 25°C (with typical Silicon)

Hibernate mode
SIDHIB1 IDD34 VDDD = 1.8 V - 300 - nA No clocks running
SIDHIB2 IDD34A VDDD = 3.0 V - 500 - nA No clocks running
SIDHIB3 IDD35 VDDD = 1.8 V - 800 - nA WCO is running
SIDHIB4 IDD35A VDDD = 3.0 V - 1000 - nA WCO is running
Power mode transition times
SID13A TDS_ACT

Deep Sleep to Active transition time. Guaranteed by design

- 45 60 µs

DS to Active with 1.0 V operation, with upper inrush current limit

SID13B TDS_ACTLP

Deep Sleep to Active LP transition time.

Guaranteed by design

- 20 35 µs

DS to Active LP with 0.9 V operation

SID13C TDSR_ACT

Deep Sleep-RAM to Active transition time.

Guaranteed by design

- - 800 µs

DS to Active with 1.0 V operation, with upper inrush current limit

SID13D TDSR_ACTLP

Deep Sleep-RAM to Active LP transition time.

Guaranteed by Design

- - 800 µs

DS-RAM to Active LP with 0.9 V operation

SID14 THIB_ACT

Hibernate to Active transition time

- 2000 - µs

Hibernate to Active with 1.0 V operation, with upper inrush current limit

SID14A THIB_ACTLP

Hibernate to Active LP transition time

- 2000 - µs

Hibernate to Active with 0.9 V operation, with upper inrush current limit

XRES

Table 12. XRES DC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID17 TXRES_IDD IDD when XRES asserted - 300 - nA VDDD = 1.8 V
SID17A TXRES_IDD_1 IDD when XRES asserted - 800 - nA VDDD = 3.3 V
SID77 VIH Input voltage high threshold 0.7 × VDD - - V CMOS input
SID78 VIL Input voltage low threshold - - 0.3 × VDD V CMOS input
SID80 CIN Input capacitance - 3 - pF -
SID81 VHYSXRES Input voltage hysteresis - 100 - mV -
SID82 IDIODE Current through protection diode to VDD/VSS - - 100 µA -
Table 13. XRES AC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID15 TXRES_ACT POR or XRES release to Active transition time - 1000 - µs Normal mode, 96 MHz M33, upper inrush current
SID16 TXRES_PW XRES pulse width 5 - - µs -

GPIO

Table 14. GPIO DC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID57 VIH Input voltage HIGH threshold 0.7 × VDD - - V CMOS input
SID57A IIHS Input current when Pad > VDDIO for OVT inputs - - 10 µA Per I2C spec
SID58 VIL Input voltage LOW threshold - - 0.3 × VDD V CMOS input
SID241 VIH LVTTL input, VDD < 2.7 V 0.7 × VDD - - V -
SID242 VIL LVTTL input, VDD < 2.7 V - - 0.3 × VDD V -
SID243 VIH LVTTL input, VDD > 2.7 V 2.0 - - V -
SID244 VIL LVTTL input, VDD > 2.7 V - - 0.8 V -
SID59 VOH Output voltage high level VDD – 0.5 - - V IOH = 8 mA
SID62A VOL Output voltage low level - - 0.4 V IOL = 8 mA
SID63 RPULLUP Pull-up resistor 3.5 5.6 8.5 -
SID64 RPULLDOWN Pull-down resistor 3.5 5.6 8.5 -
SID65 IIL Input leakage current (absolute value) - - 2 nA 25°C, VDD = 3.0 V
SID66 CIN Input capacitance - - 5 pF -
SID67 VHYSTTL Input hysteresis LVTTL VDD > 2.7 V 100 0 - mV -
SID68 VHYSCMOS Input hysteresis CMOS 0.05 × VDD - - mV -
SID69 IDIODE Current through protection diode to VDD/VSS - - 100 µA -
SID69A ITOT_GPIO Maximum total source or sink chip current - - 200 mA -
Table 15. GPIO AC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID70 TRISEF Rise time in Fast Strong mode. 10% to 90% of VDD - 3.5 - ns CLOAD = 15 pF, 8 mA rive strength, VDDIO > 2.7 V
SID70A TRISEF_1 Rise time in Fast Strong mode. 10% to 90% of VDD - 5.5 - ns CLOAD = 15pF, VDDIO < 2.7 V, maximum slew and drive strength
SID71 TFALLF Fall time in Fast Strong mode. 10% to 90% of VDD - 3.5 - ns CLOAD = 15 pF, 8 mA drive strength, VDDIO > 2.7 V
SID71A TFALLF_1 Fall time in Fast Strong mode. 10% to 90% of VDD - 5.5 - ns CLOAD = 15pF, VDDIO < 2.7 V, maximal slew and drive strength
SID72 TRISES_1 Rise time in Slow Strong mode. 10% to 90% of VDD 52 - 142 ns CLOAD = 15 pF, 8 mA drive strength, VDD 2.7 V
SID72A TRISES_2 Rise time in Slow Strong mode. 10% to 90% of VDD 48 - 102 ns CLOAD = 15 pF, 8 mA drive strength, 2.7 V < VDD 3.6
SID73 TFALLS_1 Fall time in Slow Strong mode. 10% to 90% of VDD 44 - 211 ns CLOAD = 15 pF, 8 mA drive strength, VDD 2.7 V
SID74 FGPIOUT1 GPIO Fout; Fast Strong mode - - 100 MHz 90/10%, 15 pF load, 60/40 duty cycle
SID75 FGPIOUT2 GPIO Fout; Slow Strong mode - - 1.5 MHz 90/10%, 15 pF load, 60/40 duty cycle
SID76 FGPIOUT3 GPIO Fout; Fast Strong mode - - 100 MHz 90/10%, 15 pF load, 60/40 duty cycle
SID245 FGPIOUT4 GPIO Fout; Slow Strong mode - - 1.3 MHz 90/10%, 15 pF load, 60/40 duty cycle
SID246 FGPIOIN GPIO input operating frequency; 1.71 V VDD 3.6 V - - 100 MHz 90/10% VIO d

Analog peripherals

Table 16. Internal reference specification
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID93R VREFBG - 1.188 1.2 1.212 V -

AUD ADC

Table 17. MIC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
MIC specifications
DM.4 -

Audio/Mic supply -

VDDA

1.8 - 3.3 V -
DM.5 - Current consumption - 1.5 - mA

25°C, VDDA = 3 V,

excludes MIC_BIAS loading

current

DM.6 - Power down current - 0.1 - µA 25°C, VDDA = 3 V
DM.21 - MIC PGA gain range 0 - 42 dB -
DM.22 - MIC PGA gain step - 1 - dB -
DM.23 - MIC PGA gain error - ±1 - dB -
DM.24 - PGA input referred noise - - 4 µV

@ 42 dB PGA gain

A-weighted

DM.25 - Passband gain flatness - - - dB PGA + ADC, 100-4 kHz
DM.26 -

MIC_BIAS output voltage -

VDDA * 0.75 * 1.12

- 2.52 - V VDDA = 3 V
DM.27 - MIC_BIAS loading current - - 3 mA -
DM.28 - MIC_BIAS noise - - 3 µV

Referred to PGA input,

20-8 kHz, A-weighted

DM.29 - MIC_BIAS PSRR 40 - - dB 1 kHz
Table 18. ADC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
DM.2 - Analog supply voltage - VDDA 1.7 - 3.6 V -
DM.5 - Active current consumption - 2 - mA 25°C
DM.6 - Power down current - 0.1 - µA 25°C - ADC disabled with device in Active mode
DM.8 - Absolute error - Includes gain error, offset and distortion - - 5 % -
DM.10 - ENOB - Audio application - 12 - Bit -
DM.11 - ENOB - Static application - 11 - Bit -
DM.12 - ADC input full scale -

Audio application

- 1.6 - Vpp -
DM.13 - ADC input full scale -

Static application

0 - VDDA Vpp -
DM.14 - Conversion rate -

Audio application

16 48 - kHz -
DM.15 - Conversion rate -

Static application

50 100 - kHz -
DM.16 - Signal bandwidth -

Audio application

20 - 8000 Hz -
DM.17 - Signal bandwidth -

Static application

- DC - Hz -
DM.18 -

Startup time -

Audio application

- 10 - ms -
DM.19 -

Startup time -

Static application

- 20 - µs -
DM.30 - ADC SNR 78 - - dB

0 dB PGA gain,

A-weighted

DM.31 - ADC THD+N 74 - - dB

–3 dB FS input,

0 dB PGA gain

DM.33 - GPIO source impedance - - 1k Ohm 10 µs measurement time

Digital peripherals

Table 19. Timer/counter/PWM (TCPWM) specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID.TCPWM.1 ITCPWM1

Block current

consumption at 8 MHz

- - 70 µA All modes (TCPWM)
SID.TCPWM.2 ITCPWM2

Block current

consumption at 24 MHz

- - 180 µA All modes (TCPWM)
SID.TCPWM.2A ITCPWM3

Block current

consumption at 50 MHz

- - 270 µA All modes (TCPWM)
SID.TCPWM.2B ITCPWM4

Block current

consumption at

100 MHz

- - 540 µA All modes (TCPWM)
SID.TCPWM.3 TCPWMFREQ Operating frequency - - 100 MHz

Fc max = Fcpu

Maximum = 100 MHz

SID.TCPWM.4 TPWMENEXT

Input trigger pulse

width for all trigger

events

2/Fc - - ns

Trigger events can be Stop,

Start, Reload, Count,

Capture, or Kill depending

on which mode of

operation is selected

SID.TCPWM.5 TPWMEXT

Output trigger pulse

widths

1.5/Fc - - ns

Minimum possible width of

Overflow, Underflow, and

CC (Counter equals

Compare value) trigger

outputs

SID.TCPWM.5A TCRES Resolution of counter 1/Fc - - ns

Minimum time between

successive counts

SID.TCPWM.5B PWMRES PWM resolution 1/Fc - - ns

Minimum pulse width of

PWM output

SID.TCPWM.5C QRES

Quadrature inputs

resolution

2/Fc - - ns

Minimum pulse width

between Quadrature phase

inputs. Delays from pins

should be similar

Table 20. Serial communication block (SCB) specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
I2C DC specifications
SID149 II2C1 Block current consumption at 100 kHz - - 30 µA -
SID150 II2C2 Block current consumption at 400 kHz - - 80 µA -
SID151 II2C3 Block current consumption at 1 Mbps - - 180 µA -
SID152 II2C4 I2C enabled in Deep Sleep

mode

- - 1.7 µA At 60°C
I2C AC specifications
SID153 FI2C1 Bit rate - - 1 Mbps -
UART DC specifications
SID160 IUART1 Block current consumption at 100 kbps - - 30 µA -
SID161 IUART2 Block current consumption at 1000 kbps - - 180 µA -
UART AC specifications
SID162A FUART1 Bit rate - - 3 Mbps ULP mode
SID162B FUART2 Bit rate - - 8 Mbps LP mode
SPI DC specifications
SID163 ISPI1 Block current consumption at 1 Mbps - - 220 µA -
SID164 ISPI2 Block current consumption at 4 Mbps - - 340 µA -
SID165 ISPI3 Block current consumption at 8 Mbps - - 360 µA -
SID165A ISP14 Block current consumption at 25 Mbps - - 800 µA -
SPI AC specifications for LP mode (VCCD = 1.1 V) unless noted otherwise
SID166 FSPI SPI operating frequency Master and externally clocked Slave - - 24 MHz -
SID166B FSPI_EXT SPI operating frequency Master (Fscb is SPI clock) - - Fscb/4 MHz Fscb max is 96 MHz in LP mode, 24 MHz in ULP mode
SID166A FSPI_IC SPI Slave internally clocked - - 24 MHz -
SPI AC specifications for ULP mode (VCCD = 1.0 V) unless noted otherwise
SID166C FSPI SPI operating frequency Master and externally clocked Slave - - 12 MHz -
SID166D FSPI_EXT SPI operating frequency Master (Fscb is SPI clock) - - Fscb/4 MHz Fscb max is 48 MHz in ULP mode
SID166E FSPI_IC SPI Slave internally clocked - - 12 MHz -
SPI Master mode AC specifications for LP mode (VCCD = 1.1 V) unless noted otherwise
SID167 TDMO MOSI valid after SClock driving edge - 12 12 ns 20 ns max. for ULP (VCCD=1.0 V) mode
SID168 TDSI MISO valid before SClock capturing edge 20 - - ns Full clock, late MISO sampling
SID169 THMO MOSI data hold time 0 - 5 ns Referred to Slave capturing edge
SID169C TDHI SPI Master: MISO hold time after SCLK capturing edge 0 - - ns -
SID169A TSSELMSCK1 SSEL valid to first SCK valid edge 18 21 - ns Referred to Master clock edge
SPI Master mode AC specifications for ULP mode (VCCD = 1.0 V) unless noted otherwise
SID167A TDMO MOSI valid after SClock driving edge - - 26 ns -
SID167B TDSI MISO valid before SClock capturing edge 35 - - ns -
SID167C THMO MOSI data hold time - 5 - ns -
SID167D TDHI SPI Master: MISO hold time after SCLK capturing edge 0 - - ns -
SID167E TSSELMSCK1 SSEL valid to first SCK valid edge 41 - - ns -
SPI Slave mode AC specifications for LP mode (VCCD = 1.1 V) unless noted otherwise
SID170 TDMI MOSI valid before Sclock capturing edge 5 - - ns -
SID170A SPI_FREQ For LP mode 48 - - MHz -
SID171A TDSO_EXT MISO valid after Sclock driving edge in Ext. Clk. mode - - 20 ns 35 ns max. for ULP (VCCD=1.0V) mode
SID171 TDSO MISO valid after Sclock driving edge in Internally Clk. Mode - -

TDSO_EXT

+ 3*Tscb

ns

Tscb is Serial

Communication Block clock period

SID171B TDSO MISO valid after Sclock driving edge in Internally Clk. Mode with median filter enabled - -

TDSO_EXT

+ 4*Tscb

ns

Tscb is Serial

Communication Block clock period

SID172 THSO Previous MISO data hold time 5.5 - - ns -
SID172C THIS SPI MOSI hold from SCLK 5.5 - - ns -
SPI Slave mode AC specifications for ULP mode (VCCD = 1.0 V) unless noted otherwise
SID173A TDMI MOSI valid before Sclock capturing edge 12 - - ns -
SID174A TDSO_EXT MISO valid after Sclock driving edge in Ext. Clk. mode - - 20 ns -
SID174 TDSO MISO valid after Sclock driving edge in Internally Clk. Mode - - TDSO_EXT + 3*Tscb ns -
SID174B TDSO MISO valid after Sclock driving edge in Internally Clk. Mode with median filter enabled - - TDSO_EXT + 4*Tscb ns -
SID175 THSO Previous MISO data hold time 5.5 - - ns -
SID175C THIS SPI MOSI hold from SCLK 5.5 - - ns -

Audio subsystem

Table 21. Audio subsystem specifications5
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
PDM specifications
SID400P Fmax_clk_sys Clock frequency for clk_sys - 96 - MHz PVT18 ss, 0.90 V, –40°C, scl40 library, minimum parameters
SID401 Fmax_clk_if_srss Clock frequency for audio clock reference clk_if_srss - 48 - MHz PVT18 ss, 0.90 V, –40°C, scl40 library, minimum parameters
SID402 Idyn_act_typ Typical dynamic current when cell is active. See the DC spec table for related static current spec, if applicable - - 110 µA/MHz PVT16 tt, 1.1 V, 25°C, scl40 library, typical parameters clk_audio: 49.152 MHz clk_sys: 50 MHz
SID403 Idyn_act_max Maximum dynamic active current. See the DC spec table for related static current spec, if applicable - - 132 µA/MHz PVT20 ff, 1.21 V, 150°C, scl40 library, maximum parameters clk_audio: 49.152 MHz clk_sys: 50 MHz
SID403A Idyn_slp_typ Typical dynamic current when cell is idle. See the DC spec table for related static current spec, if applicable - - 80 µA/MHz PVT16 tt, 1.1 V, 25°C, scl40 library, typical parameters, clocks toggling clk_audio: 49.152 MHz clk_sys: 50 MHz
SID403B T_SETUP Receiver setup - - 10 ns PVT18 ss, 0.90 V, –40°C, scl40 library, minimum parameters
SID403C PDM_HOLD Data input hold time to PDM_CLK edge 10 - - ns PVT18 ss, 0.90 V, –40°C, scl40 library, minimum parameters
SID404A CPDM Load - 10 - pF -
SID404 PDM_OUT Audio sample rate 8 - 48 ksps -
SID405 PDM_WL Word length 16 - 24 bits -
SID412 PDM_ST Startup time - 48 - - WS (Word Select) cycles
I2S specifications. The same for LP and ULP modes unless stated otherwise.
SID413 I2S_WORD Length of I2S word 8 - 32 bits -
SID414B I2S_BCK_F Bit Clock frequency in LP mode - - 12.288 MHz -
SID414BU I2S_BCK_F_U Bit Clock frequency in ULP mode - - 3.072 MHz -
SID414BP I2S_BCK_P Bit Clock period - 1/I2S_B CK_F - - -
SID414BPU I2S_BCK_P_U Bit Clock period in ULP mode - 1/I2S_B CK_F_U - - -
SID414 I2S_WS_FREQ Word clock frequency in LP mode - - 192 kHz -
SID414M I2S_WS_FREQ_U Word clock frequency in ULP mode - - 48 kHz -
SID435L I2S_BCK_TL Bit clock low period in LP Mode 0.35*I2 S_BCK_ P - - - -
SID415IL I2S_MCKI_TL Master clock IN low period in LP (or) ULP mode 0.45*tM CLK - - - -
SID415IH I2S_MCKI_TH Master clock IN high period in LP (or) ULP Mode 0.45*tM CLK - - - -
SID415OL I2S_MCKO_TL Master clock Out low period in LP (or) ULP mode 0.35*tM CLK 0.45*t MCLK to 0.4*tMC LK - - -
SID415OH I2S_MCKO_TH Master clock Out high period in LP (or) ULP mode 0.35*tM CLK 0.45*t MCLK to 0.4*tMC LK - - -
SID416 TDM_OUTPUT_LOAD_MAX Capacitive load 10 - - - -
I2S Slave mode
SID430 I2S_S_TS_WS WS Setup time before the first edge following the driving edge of Bit Clock for LP Mode 0.2 * I2S_BC K_P - - ns -
SID430U I2S_S_TS_WS_U WS Setup time before the first edge following the driving edge of bit clock for ULP mode 0.2 * I2S_BC K_P_U - - ns -
SID430A I2S_S_TH_WS WS Hold time after the first edge following the driving edge of bit clock, LP or ULP mode 0 - - ns -
SID432 I2S_S_SDO SDO Propagation delay from driving edge of bit clock for LP mode 0 - 0.3 * I2S_B CK_P ns -
SID432U I2S_S_SDO_U SDO Propagation delay from driving edge of bit clock for ULP mode 0 - 0.3 * I2S_B CK_P ns -
I2S Master mode
SID437 I2S_M_WS WS propagation delay from driving edge of bit clock for LP mode 0 - 0.2 * I2S_B CK_P ns -
SID437_U I2S_M_WS_U WS propagation delay from driving edge of bit clock for ULP mode 0 - 0.2 * I2S_B CK_P _U ns -
SID438 I2S_M_SDO SDO Propagation delay from driving edge of bit clock for LP mode 0 - 0.2 * I2S_B CK_P ns -
SID438U I2S_M_SDO_U SDO Propagation delay from driving edge of bit clock for ULP mode 0 - 0.2 * I2S_B CK_P _U ns Associated clock edge depends on selected polarity

System resources

Power-on reset

Table 22. Power-on reset (POR) with brownout detect (BOD) DC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
Precise POR (PPOR)
SID190 VFALLPPOR

BOD trip voltage in Active and Sleep modes. VDDD

1.54 - - V BOD Reset guaranteed for VDDD levels below 1.54 V
SID192 VFALLDPSLP

BOD trip voltage in Deep Sleep. VDDD

1.54 - - V -
SID192A VDDRAMP Maximum power supply ramp rate (any supply) - - 100 mV/µs Active mode
Table 23. POR with BOD AC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID194A VDDRAMP_DS Maximum power supply ramp rate (any supply) in system Deep Sleep mode - - 10 mV/µs BOD operation guaranteed

Voltage monitors

Table 24. Voltage monitors DC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID195 VHVDI1 - 1.38 1.43 1.47 V -
SID196 VHVDI2 - 1.57 1.63 1.68 V -
SID197 VHVDI3 - 1.76 1.83 1.89 V -
SID198 VHVDI4 - 1.95 2.03 2.10 V -
SID199 VHVDI5 - 2.05 2.13 2.2 V -
SID200 VHVDI6 - 2.15 2.23 2.3 V -
SID201 VHVDI7 - 2.24 2.33 2.41 V -
SID202 VHVDI8 - 2.34 2.43 2.51 V -
SID203 VHVDI9 - 2.44 2.53 2.61 V -
SID204 VHVDI10 - 2.53 2.63 2.72 V -
SID205 VHVDI11 - 2.63 2.73 2.82 V -
SID206 VHVDI12 - 2.73 2.83 2.92 V -
SID207 VHVDI13 - 2.82 2.93 3.03 V -
SID208 VHVDI14 - 2.92 3.03 3.13 V -
SID209 VHVDI15 - 3.02 3.13 3.23 V -
SID211 LVI_IDD Block current - 5 15 µA -
Table 25. Voltage monitors AC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID212 TMONTRIP Voltage monitor trip time - - 170 nS -

SWD and trace interface

Table 26. SWD and trace specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID214 F_SWDCLK2 1.7 V ≤ VDDD ≤ 3.6 V - - 25 MHz LP mode; VCCD = 1.1 V
SID214L F_SWDCLK2L 1.7 V ≤ VDDD ≤ 3.6 V - - 12 MHz ULP mode;

VCCD = 1.0 V.

SID215 T_SWDI_SETUP T = 1/f SWDCLK 0.25 * T - - ns For both LP and ULP modes
SID216 T_SWDI_HOLD T = 1/f SWDCLK 0.25 * T - - ns For both LP and ULP modes
SID217 T_SWDO_VALID T = 1/f SWDCLK - - 0.5 * T ns -
SID217A T_SWDO_HOLD T = 1/f SWDCLK 1 - - ns -
SID214T F_TRCLK_LP1 With trace data setup/hold times of 2/1 ns respectively - - 48 MHz LP mode, VCCD = 1.1 V
SID215T F_TRCLK_LP2 With trace data setup/hold times of 3/2 ns respectively - - 48 MHz LP mode, VCCD = 1.1 V
SID216T F_TRCLK_ULP With trace data setup/hold times of 3/2 ns respectively - - 24 MHz ULP mode, VCCD = 1.0 V

Internal main oscillator

Table 27. IMO DC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID218 IIMO1 IMO operating current at 8 MHz - 9 15 µA -
Table 28. IMO AC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID223 FIMOTOL1 Frequency variation centered on 8 MHz - - ±2 % -
SID227 TJITR Cycle-to-cycle and period jitter - ±250 - µs -

Internal low-speed oscillator

Table 29. ILO DC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID231 IILO2 ILO operating current at 32 kHz - 0.3 0.7 µA -
Table 30. ILO AC specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID234 TSTARTILO1 ILO startup time - - 7 µs

Startup time to 80% of final frequency

- - 35 µs Startup time to 95% of final frequency
SID236 TLIODUTY ILO duty cycle 45 50 55 % -
SID237 FILOTRIM1 32 kHz trimmed frequency 28.8 32 35.2 kHz ± 10% variations

FLL

Table 31. Frequency locked loop (FLL) specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID450 FLL_RANGE Input frequency range 0.040 - 96.00 MHz Upper limit is for External input
SID451 FLL_OUT_DIV2 Output frequency range. VCCD = 1.1 V 24.00 - 96.00 MHz Output range of FLL divided by 2 output
SID451A FLL_OUT_DIV2 Output frequency range. VCCD = 0.9 V 24.00 - 48.00 MHz Output range of FLL divided by 2 output
SID452 FLL_DUTY_DIV2 Divided-by-2 output; High or Low 47.00 - 53.00 % -
SID454 FLL_WAKEUP Time from stable input clock to 1% of final value on deep sleep wakeup - - 11.00 µs With IMO input, less than 10°C change in temperature while in Deep Sleep, and Fout 50 MHz.
SID455 FLL_JITTER Period jitter (1 sigma at 100 MHz) - - 18.00 ps -
SID456 FLL_CURRENT CCO + logic current - - 5.50 µA/MHz -

Crystal oscillator

Table 32. ECO specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
MHz ECO DC specifications
SID316 IDD_MHZ Block operating current with Cload up to 18 pF - 1200 - µA Type 24 MHz
MHz ECO AC specifications
SID317 F_MHz Crystal frequency range - 24 - MHz -
kHz ECO DC specifications
SID318 IDD_kHz Block operating current with 32-kHz crystal - 0.38 1 µA -
SID321E ESR32K Equivalent series resistance - 80 - kΩ -
SID322E PD32K Drive level - - 0.5 µW -
kHz ECO AC specifications
SID319 F_kHz 32-kHz trimmed frequency - 32.8 - kHz -
SID320 Ton_kHz Startup time - - 1000 ms -
SID320E FTOL32K Frequency tolerance - 50 250 ppm -

Clock source switching time

Table 33. Clock source switching time specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID262 TCLKSWITCH Clock switching from one CLK_HF to another CLK_HF in clock periods6 - - 4 clk1 + 3 clk2 periods -

QSPI

Table 34. QSPI specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SMIF QSPI specifications. All specs with 15-pF load
SID390Q Fsmifclock SMIF QSPI output clock frequency - - 48 MHz LP mode (1.1 V)
SID390QU Fsmifclocku SMIF QSPI output clock frequency - - 24 MHz ULP mode (1.0 V)
SID397Q Idd_qspi Block current in LP mode (1.0 V) - - 1900 µA LP mode (1.1 V)
SID398Q Idd_qspi_u Block current in ULP mode (0.9 V) - - 590 µA ULP mode (1.0 V)
SID399A SDR_TCSH0 CS# active hold to CK 4 - - ns -
SID399B SDR_TOUT_ SETUP_LF Output setup time of DQ[3:0] to CK high 5.1 - - ns -
SID399C SDR_TOUT_ HOLD_LF Output hold time of DQ[3:0] to CK high 5.1 - - ns -
SID399D SDR_TIN_V CK low to DQ[3:0] input valid time - - 6.7 ns -
SID399E SDR_TIN_HO CK low to DQ[3:0] input hold time 1 - - ns -

Smart I/O

Table 35. Smart I/O specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
SID420 SMIO_BYP Smart I/O Bypass delay - - 2 ns -
SID421 SMIO_LUT Smart I/O LUT prop delay - - 2 ns -

JTAG boundary scan

Table 36. JTAG boundary scan
Spec ID# Parameter Min Typ Max Unit Desctiption
JTAG boundary scan parameters
SID460 TCKLOW TCK LOW minimum 34 - - ns -
SID461 TCKHIGH TCK HIGH 10 - - ns -
SID462 TCK_TDO TDO clock-to-out (max) from falling TCK - - 22 ns -
SID463 TSU_TCK TDI, TMS Setup time before rising TCK 12 - - ns -
SID464 TCk_THD TDI, TMS Hold time after rising TCK 10 - - ns -
SID465 TCK_TDOV TCK to TDO data valid (High-Z to active) 22 - - ns -
SID466 TCK_TDOZ TCK to TDO data valid (Active to High-Z) 22 - - ns -
JTAG boundary scan parameters for 1.1 V (LP) mode operation
SID468 TCKLOW TCK low 52 - - ns -
SID469 TCKHIGH TCK high 10 - - ns -
SID469A TCKPERIOD CLK_JTAG_PERIOD, 30 pF load - 62 - ns -
SID470 TCK_TDO TCK falling edge to output valid - - 40 ns -
SID471 TSU_TCK Input valid to TCK rising edge 12 - - ns -
SID472 TCk_THD Input hold time to TCK rising edge 10 - - ns -
SID473 TCK_TDOV TCK falling edge to output valid (High-Z to active) 40 - - ns -
JTAG boundary scan p for 1.0 V (ULP) mode operation
SID468A TCKLOW TCK low 102 - - ns -
SID469A TCKHIGH TCK high 20 - - ns -
SID470A TCK_TDO TCK falling edge to output valid - - 80 ns -
SID471A TSU_TCK Input valid to TCK rising edge 22 - - ns -
SID472A TCk_THD Input hold time to TCK rising edge 20 - - ns -
SID473A TCK_TDOV TCK falling edge to output valid (High-Z to active) 80 - - ns -
SID474A TCK_TDOZ TCK fallingedgetooutput valid (Active to high-Z) 80 - - ns -

Bluetooth® LE

Table 37. Bluetooth® LE subsystem specifications
Spec ID# Parameter Description Min Typ Max Unit Details/conditions
RF receiver specifications (1 Mbps)
SID317R RXS, IDLE RX sensitivity with ideal transmitter - -98 - dBm Across RF operating frequency range
SID318R RXS, IDLE RX sensitivity with ideal transmitter - -96.5 - dBm
SID319R PRXMAX Maximum received signal strength at < 30.8% PER - -5 - dBm

RF-PHY specification

(RCV-LE/CA/06/C)

SID320R CI1

Co-channel interference, Wanted Signal at –67 dBm and Interferer at FRX

- 9 21 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID321R CI2

Adjacent channel interference Wanted Signal at –67 dBm and Interferer at FRX ± 1 MHz

- -3 15 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID322R CI3

Adjacent channel interference Wanted Signal at –67 dBm and Interferer at FRX ± 2 MHz

- -45 -17 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID323R CI4

Adjacent channel interference Wanted Signal at –67 dBm and Interferer at ≥ FRX ± 3 MHz

- -49 -27 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID324R CI5

Adjacent channel interference Wanted Signal at –67 dBm and Interferer at image frequency (FIMAGE)

- -31 -9 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID325R CI6

Adjacent channel interference Wanted Signal at –67dBm and Interferer at image frequency (FIMAGE ± 1 MHz)

- -35 -15 dB

RF-PHY specification

(RCV-LE/CA/03/C)

RF receiver specifications (2 Mbps)
SID3267 RXS, IDLE RX sensitivity with ideal transmitter - -95 - dBm

Across RF operating

frequency range

SID3278 RXS, IDLE RX sensitivity with ideal transmitter - -93.5 - dBm
SID328R PRXMAX Maximum received signal strength at < 30.8% PER - -5 - dBm

RF-PHY specification

(RCV-LE/CA/06/C)

SID329R CI1 Co-channel interference, Wanted Signal at –67 dBm and Interferer at FRX - 7 21 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID330 CI2 Adjacent channel interference Wanted Signal at –67 dBm and Interferer at FRX ± 2 MHz - -2 15 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID331 CI3 Adjacent channel interference Wanted Signal at –67 dBm and Interferer at FRX ± 4 MHz - -42 -15 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID332 CI4 Adjacent channel interference Wanted Signal at –67 dBm and Interferer at ≥ FRX ± 6 MHz - -42 -27 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID333 CI5 Adjacent channel interference Wanted Signal at –67 dBm and Interferer at Image frequency (FIMAGE) - -29 -9 dB

RF-PHY specification

(RCV-LE/CA/03/C)

SID334 CI6 Adjacent channel interference Wanted Signal at –67 dBm and Interferer at Image frequency (FIMAGE ± 2 MHz) - -40 -15 dB

RF-PHY specification

(RCV-LE/CA/03/C)

RF receiver specification S2 (500 kbps)
SID501 RXS, IDLE RX sensitivity with Ideal Transmitter, Standard Mod Index Rx - -101 - dBm Across RF operating frequency range
SID506 CI1 Co-channel interference, Wanted Signal at –72 dBm and Interferer at FRX - 3 17 dB RF-PHY specification (RCV-LE/CA/28/C)
SID507 CI2 Adjacent channel interference Wanted Signal at –72 dBm and Interferer at FRX ± 1 MHz - -11 11 dB RF-PHY specification (RCV-LE/CA/28/C)
SID508 CI3 Adjacent channel interference Wanted Signal at –72 dBm and Interferer at FRX ± 2 MHz - -50 -21 dB RF-PHY specification (RCV-LE/CA/28/C)
SID509 CI4 Adjacent channel interference Wanted Signal at –72 dBm and Interferer at FRX ± 3 MHz - -53 -31 dB RF-PHY specification (RCV-LE/CA/28/C)
SID510 CI5 Adjacent channel interference Wanted Signal at –72 dBm and Interferer at image frequency (FIMAGE) - -37 -13 dB RF-PHY specification (RCV-LE/CA/28/C)
SID511 CI6 Adjacent channel interference Wanted Signal at –72 dBm and Interferer at image frequency (FIMAGE ± 1 MHz) - -42 -19 dB RF-PHY specification (RCV-LE/CA/28/C)
RF Receiver specification S8 (125 kbps)
SID512 RXS, IDLE RX sensitivity with Ideal Transmitter8 - -106 - dBm Across RF operating frequency range
SID517 CI1 Co-channel interference, Wanted Signal at –79 dBm and Interferer at FRX - 6 12 dB RF-PHY specification (RCV-LE/CA/29/C)
SID518 CI2 Adjacent channel interference Wanted Signal at –79 dBm and Interferer at FRX ± 1 MHz - -18 6 - RF-PHY specification (RCV-LE/CA/29/C)
SID519 CI3 Adjacent channel interference Wanted Signal at –79 dBm and Interferer at FRX ± 2 MHz - -52 -26 - RF-PHY specification (RCV-LE/CA/29/C)
SID520 CI4 Adjacent channel interference Wanted Signal at –79 dBm and Interferer at FRX ± 3 MHz - -51 36 - RF-PHY specification (RCV-LE/CA/29/C)
SID521 CI5 Adjacent channel interference Wanted Signal at –79 dBm and Interferer at Image frequency (FIMAGE) - -40 -18 - RF-PHY specification (RCV-LE/CA/29/C)
SID522 CI6 Adjacent channel interference Wanted Signal at –79 dBm and Interferer at Image frequency (FIMAGE ± 1 MHz) - -47 -24 - RF-PHY specification (RCV-LE/CA/29/C)
RF Receiver specification (1 and 2 Mbps)
SID338 OBB1 Out of Band Blocking Wanted Signal at –67 dBm and Interferer at F = 30 –2000 MHz -30 - - dBm RF-PHY specification (RCV-LE/CA/04/C)
SID339 OBB2 Out of Band Blocking Wanted Signal at –67 dBm and Interferer at F = 2003 - 2399 MHz -35 - - dBm RF-PHY specification (RCV-LE/CA/04/C)
SID340 OBB3 Out of Band Blocking, Wanted Signal at –67 dBm and Interferer at F = 2484 - 2997 MHz -35 - - dBm RF-PHY specification (RCV-LE/CA/04/C)
SID341 OBB4 Out of Band Blocking Wanted Signal at -67 dBm and Interferer at F = 3000 - 12750 MHz -30 - - dBm RF-PHY specification (RCV-LE/CA/04/C)
SID342 IMD Intermodulation Performance Wanted Signal at –64 dBm and 1 Mbps Bluetooth® LE, 3rd, 4th and 5th offset channel -50 - - dBm RF-PHY specification (RCV-LE/CA/05/C)
SID343 RXSE1 Receiver Spurious emission 30 MHz to 1.0 GHz - - -57 dBm 100 kHz measurement bandwidth ETSI EN300 328 V2.1.1
SID344 RXSE2 Receiver Spurious emission 1.0 GHz to 12.75 GHz - - -53 dBm 1 MHz measurement bandwidth ETSI EN300 328 V2.1.1
RF Transmitter specifications
SID345 TXP, ACC RF power accuracy -2 - 2 dB -
SID346 TX0 Power range - 23 - dB –24 dBm to 0 dBm
TX10 Power range - 33 - dB –24 dBm to 10 dBm
SID347 TXP, 0 dBm Output power, 0 dB power setting - 0 - dBm For TX10 mode, BT_PAVDD connected to VCCPA_0. The minimum supply voltage VDDD is 2.7 V
SID348 TXP, 10 dBm Output power, 10 dBm power setting - 10 - dBm For TX10 mode, BT_PAVDD connected to VCCPA_0. The minimum supply voltage VDDD is 2.7 V
SID349 TXP, MIN Output power, minimum power setting - -20 - dBm For TX10 mode, BT_PAVDD connected to VCCPA_0. The minimum supply voltage VDDD is 2.7 V
SID350 F2Max Average frequency deviation for 10101010 pattern 185 - - kHz RF-PHY specification (TRM-LE/CA/05/C)
SID350R F2Max_2M Average frequency deviation for 10101010 pattern for 2 Mbps 370 - - kHz RF-PHY specification (TRM-LE/CA/05/C)
SID350LR F1Max_S8 Average frequency deviation for 10101010 pattern for 125 bps 185 - - kHz RF-PHY specification (TRM-LE/CA/13/C)
SID351 F1AVG Average frequency deviation for 11110000 pattern 225 250 275 kHz RF-PHY specification (TRM-LE/CA/05/C)
SID351R F1AVG_2M Average frequency deviation for 11110000 pattern for 2 Mbps 450 500 550 kHz RF-PHY specification (TRM-LE/CA/05/C)
SID351R F1AVG_S8 Average frequency deviation for 11110000 pattern for 125 kbps 225 250 275 kHz RF-PHY specification (TRM-LE/CA/13/C)
SID352 EO Eye opening = ∆F2AVG/∆F1AVG 0.8 - - - RF-PHY specification (TRM-LE/CA/05/C)
SID353 FTX,ACC Frequency accuracy -150 - 150 kHz RF-PHY specification (TRM-LE/CA/06/C)
SID354 FTX,MAXDR Maximum frequency drift -50 - 50 kHz RF-PHY specification (TRM-LE/CA/06/C)
SID355 FTX, INITDR Initial frequency drift -20 - 20 kHz RF-PHY specification (TRM-LE/CA/06/C)
SID355LR FTX, INITDR, S8 Initial frequency drift -19.2 - 19.2 kHz RF-PHY specification (TRM-LE/CA/14/C)
SID356 FTX, DR Maximum drift rate -20 - 20

kHz/

50 µs

RF-PHY specification (TRM-LE/CA/06/C)
FTX, DR, S8 Maximum drift rate -19.2 - 19.2

kHz/

50 µs

RF-PHY specification (TRM-LE/CA/14/C)
SID357 IBSE1

In Band Spurious Emission at 2 MHz offset (1 Mbps)

In Band Spurious Emission at 4 MHz offset (2 Mbps)

- - -20 dBm RF-PHY specification (TRM-LE/CA/03/C)
SID358 IBSE2 In Band Spurious Emission at > 3 MHz offset (1 Mbps)

In Band Spurious Emission at > 6 MHz offset (2 Mbps)

- - -30 dBm RF-PHY specification (TRM-LE/CA/03/C)
SID359 TXSE1 Transmitter Spurious Emissions (Averaging), < 1.0 GHz - - -55.5 dBm FCC-15.247
SID360 TXSE2 Transmitter Spurious

Emissions (Averaging), > 1.0 GHz

- - -41.5 dBm FCC-15.247
RF Current specifications
SID361 IRX1_wb Receive current (LE 1 Mbps) - 5.6 - mA Measured with VCC_BUCK = 3.0 V. In all cases, VCCI = 1.16 V and VCCRF = 1.1 V. For TX0, BT_PAVDD = VCCRF. For TX10, BT_PAVDD = VCCPA_0 = 2.5 V
SID362 ITX1_0dBm TX current at 0 dBm setting (LE 1 Mbps) - 5.2 - mA
SID365R ITX1_10dBm TX current at 10 dBm setting (LE 1 Mbps) - 17.2 - mA
General RF specifications
SID373 FREQ RF operating frequency 2402 - 2480 MHz -
SID374 CHBW Channel spacing - 2 - MHz -
SID375 DR1 On-air data rate (1 Mbps) - 1000 - kbps -
SID376 DR2 On-air data rate (2 Mbps) - 2000 - kbps -
RSSI specifications
SID379 RSSI, ACC RSSI accuracy -4 - 4 dB –95 dBm to –20 dBm measurement range
SID380 RSSI, RES RSSI resolution - 1 - dB
SID381 RSSI, PER RSSI sample period - 6 - µs
System-level Bluetooth® LE specifications
SID433R Adv_Pwr

Advertising power, 1.28 s advertising interval, 31 bytes, TX 0 dBm

- 44.5 - µW Connectible advertising, VBAT = 3.0 V. Measured with WCO.
- 46.9 - µW Connectible advertising, VBAT = 3.0 V. Measured with PILO.
SID434R

Conn_Pwr_300

Connection power, 300 ms connection interval, 0 bytes, TX 0 dBm

- 64.6 - µW VBAT = 3.0 V. Measured with WCO.
- 68.0 - µW VBAT = 3.0 V. Measured with PILO.
SID435R Conn_Pwr_1S

Connection power, 1000 ms connection interval, 0 bytes, TX 0 dBm

- 29.5 - µW VBAT = 3.0 V. Measured with WCO.
- 32.4 - µW VBAT = 3.0 V. Measured with PILO.

Ordering information

Table 38 lists the CYW20829 part numbers and features.

Table 38. Ordering part numbers
Product Description Package Ambient operating temperature
CYW20829B1000 Entry level consumer focus product 6 × 6 × 0.9 mm 56-lead -40°C to 105°C
CYW20829B10109 Full featured consumer focus product with LE Audio and Automotive peripherals 6 × 6 × 0.9 mm 56-lead -40°C to 105°C

Packaging

This product line is offered in 56-lead package.

Table 39. Package dimensions
Spec ID# Package Description Package drawing number
PKG_2 56-lead 56-lead, 6 × 6 × 0.9 mm height with 0.35-mm pitch 002-31757
Table 40. Package characteristics
Parameter Description Conditions Min Typ Max Unit
TA Operating ambient - -40 25 105 °C
TJ Operating junction - - 105 °C
TJA Package θ JA (56-lead) - - 13.8 - °C/watt
TJC Package θ JC (56-lead) - - 4.8 - °C/watt
Table 41. Solder reflow peak temperature
Package Maximum peak temperature Maximum time at peak temperature
56-lead 260°C 30 s
Table 42. Package moisture sensitivity level (MSL), IPC/JEDEC J-STD-2
Package MSL
56-lead MSL-3
Figure 9. 56-lead QFN 6.0 x 6.0 x 0.9 mm LT56F 4.60 x 4.60 mm E-Pad (SAWN), Package outline (PG-VQFN-56)


Acronyms

Table 43. Acronyms used in this document
Acronym Description
3DES triple DES (data encryption standard)
ADC analog-to-digital converter
AES advanced encryption standard
AHB AMBA (advanced microcontroller bus architecture) high-performance bus, an Arm® data transfer bus
API application programming interface
Arm® advanced RISC machine, a CPU architecture
BOD brown-out detect
BTSS Bluetooth® sub system
CAD computer aided design
CBC cipher block chaining
CFB cipher feedback
CCO current controlled oscillator
CM0+ Cortex®-M0+, an Arm® CPU
CM4 Cortex®-M4, an Arm® CPU
CMOS complementary metal-oxide-semiconductor, a process technology for IC fabrication
CPU central processing unit
CRC cyclic redundancy check, an error-checking protocol
CSD CAPSENSE™ sigma-delta
CTR Counter
DAC digital-to-analog converter, see also IDAC, VDAC
DAP debug access port
DES data encryption standard
DMA direct memory access, see also TD
DNL differential nonlinearity, see also INL
DSI digital system interconnect
ECB electronic code book
ECC elliptic curve cryptography
ECDSA elliptic curve digital signature algorithm
ECO external crystal oscillator
EMI electromagnetic interference
ESD electrostatic discharge
FIFO first-in, first-out
FLL frequency locked loop
FS full-speed
GND Ground
GPIO general-purpose input/output
HMAC hash-based message authentication code
HSIOM high-speed I/O matrix
I/O input/output, see also GPIO, DIO, SIO, USBIO
I2C, or IIC Inter-Integrated Circuit, a communications protocol
I2S inter-IC sound
IC integrated circuit
IDAC current DAC, see also DAC, VDAC
IDE integrated development environment
ILO internal low-speed oscillator, see also IMO
IMO internal main oscillator, see also ILO
INL integral nonlinearity, see also DNL
IoT internet of things
IPC inter-processor communication
IRQ interrupt request
JTAG Joint Test Action Group
LIN Local Interconnect Network, a communications protocol
LP low power
LS low-speed
LUT lookup table
LVD low-voltage detect, see also LVI
LVTTL low-voltage transistor-transistor logic
MAC multiply-accumulate
MCU microcontroller unit
MCWDT multi-counter watchdog timer
MISO master-in slave-out
MMIO memory-mapped input output
MOSI master-out slave-in
MPU memory protection unit
MSL moisture sensitivity level
NMI nonmaskable interrupt
NVIC nested vectored interrupt controller
OFB output feedback
OTP one-time programmable
OVT overvoltage tolerant
PCB printed circuit board
PCM pulse code modulation
PDM pulse density modulation
PHY physical layer
PLL phase-locked loop
POR power-on reset
PRNG pseudo random number generator
PSRR power supply rejection ratio
PWM pulse-width modulator
QD quadrature decoder
QSPI quad serial peripheral interface
RAM random-access memory
RISC reduced-instruction-set computing
ROM read-only memory
RTC real-time clock
RX receive
SAR successive approximation register
SARMUX SAR ADC multiplexer bus
SCB serial communication block
SHA secure hash algorithm
SMIF serial media interface
SNR signal-to-noise ration
SPI Serial Peripheral Interface, a communications protocol
SRAM static random access memory
SROM supervisory read-only memory
SWD serial wire debug, a test protocol
SWJ serial wire JTAG
SWO single wire output
SWV serial-wire viewer
TCPWM timer, counter, pulse-width modulator
TDM time division multiplexed
TRNG true random number generator
TX transmit
UART Universal Asynchronous Transmitter Receiver, a communications protocol
ULP ultra-low power
WCO watch crystal oscillator
WDT watchdog timer
WIC wakeup interrupt controller
XIP execute-in-place
XRES external reset input pin

Document conventions

Units of measure

Table 44. Units of measure
Symbol Unit of measure
°C degrees celsius
dB decibel
fF femto farad
Hz hertz
KB 1024 bytes
kbps kilobits per second
khr kilohour
kHz kilohertz
kΩ kilo ohm
ksps kilosamples per second
LSb least significant bit
Mbps megabits per second
MHz megahertz
MΩ mega-ohm
Msps megasamples per second
µA microampere
µF microfarad
µH microhenry
µs microsecond
µV microvolt
µW microwatt
mA milliampere
ms millisecond
mV millivolt
nA nanoampere
ns nanosecond
nV nanovolt
W ohm
pF picofarad
ppm parts per million
ps picosecond
s second
sps samples per second
sqrtHz square root of hertz
V volt

Revision history

Document version Date of release Description of changes
*H 2024-04-09

Updated the doc status to Final.

Updated Bluetooth® Low Energy subsystem and added a footnote.

Updated the part number: CYW20829B0LKMLTXUMA1/CYW20829B0LKMLXQLA1 to “CYW20829B0LKML” in the Table 38.

Added IFX code Packaging information in Figure 9.

*I 2024-04-19 Updated template; no content update.
*J 2024-09-09

Updated Features

Updated Table 9

Updated Figure 8

*K 2024-01-07

Updated Figure 3

Added PILO power consumption numbers in Table 37

*L 2025-08-14

Updated product part number to B1 revision

Updated upper temperature range to 105°C

Trademarks

The Bluetooth® word mark and logos are registered trademarks owned by Bluetooth SIG, Inc., and any use of such marks by Infineon is under license.

1 For the end user AoA/AoD solutions like RTLS, Direction Finding, and so on, customers and partners will be required to build or license various system components to realize the final solution.
2

The notation for a signal is of the form IPName[x].signal_name[u]:y.

IPName = Name of the block (such as tcpwm), x = Unique instance of the IP, Signal_name = Name of the signal, u = Signal number where there are more than one signals for a particular signal name, y = Designates copies of the signal name.

For example, the name tcpwm[0].line_compl[3]:4 indicates that this is instance 0 of a tcpwm block, the signal is line_compl # 3 (complement of the line output) and this is the fourth occurrence (copy) of the signal. Signal copies are provided to allow flexibility in routing and to maximize utilization of on-chip resources.

3 Usage above the absolute maximum conditions listed in Table 10 may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods of time may affect device reliability. The maximum storage temperature is 150°C in compliance with JEDEC Standard JESD22-A103, High Temperature Storage Life. When used below absolute maximum conditions but above normal operating conditions, the device may not operate to specification.
4 Usage above the absolute maximum conditions listed in Table 10 may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods of time may affect device reliability. The maximum storage temperature is 150°C in compliance with JEDEC Standard JESD22-A103, High Temperature Storage Life. When used below absolute maximum conditions but above normal operating conditions, the device may not operate to specification.
5 TMCLK_SOC is the internal I2S master clock period.
6 As an example, if the clk_path[1] source is changed from the IMO to the FLL (see Figure 3) then clk1 is the IMO and clk2 is the FLL.
7 Coherent demodulator enabled with stable modulation index.
8 Coherent demodulator enabled with standard modulation index.
9 T and R device with “T”
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